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Dislocation emission at the Silicon/Silicon nitride interface: A million atom molecular dynamics simulation on parallel computers
Phys Rev Lett. 2000 Jan 10; 84(2):322-5.PR

Abstract

Mechanical behavior of the Si(111)/Si(3)N4(0001) interface is studied using million atom molecular dynamics simulations. At a critical value of applied strain parallel to the interface, a crack forms on the silicon nitride surface and moves toward the interface. The crack does not propagate into the silicon substrate; instead, dislocations are emitted when the crack reaches the interface. The dislocation loop propagates in the (1; 1;1) plane of the silicon substrate with a speed of 500 (+/-100) m/s. Time evolution of the dislocation emission and nature of defects is studied.

Authors+Show Affiliations

Concurrent Computing Laboratory for Materials Simulations, Department of Physics & Astronomy and Department of Computer Science, Louisiana State University, Baton Rouge, Louisiana 70803-4001, USA.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article

Language

eng

PubMed ID

11015901

Citation

Bachlechner, ME, et al. "Dislocation Emission at the Silicon/Silicon Nitride Interface: a Million Atom Molecular Dynamics Simulation On Parallel Computers." Physical Review Letters, vol. 84, no. 2, 2000, pp. 322-5.
Bachlechner ME, Omeltchenko A, Nakano A, et al. Dislocation emission at the Silicon/Silicon nitride interface: A million atom molecular dynamics simulation on parallel computers. Phys Rev Lett. 2000;84(2):322-5.
Bachlechner, M. E., Omeltchenko, A., Nakano, A., Kalia, R. K., Vashishta, P., Ebbsjo, I., & Madhukar, A. (2000). Dislocation emission at the Silicon/Silicon nitride interface: A million atom molecular dynamics simulation on parallel computers. Physical Review Letters, 84(2), 322-5.
Bachlechner ME, et al. Dislocation Emission at the Silicon/Silicon Nitride Interface: a Million Atom Molecular Dynamics Simulation On Parallel Computers. Phys Rev Lett. 2000 Jan 10;84(2):322-5. PubMed PMID: 11015901.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Dislocation emission at the Silicon/Silicon nitride interface: A million atom molecular dynamics simulation on parallel computers AU - Bachlechner,ME, AU - Omeltchenko,A, AU - Nakano,A, AU - Kalia,RK, AU - Vashishta,P, AU - Ebbsjo,I,I AU - Madhukar,A, PY - 1999/07/19/received PY - 2000/10/4/pubmed PY - 2000/10/4/medline PY - 2000/10/4/entrez SP - 322 EP - 5 JF - Physical review letters JO - Phys. Rev. Lett. VL - 84 IS - 2 N2 - Mechanical behavior of the Si(111)/Si(3)N4(0001) interface is studied using million atom molecular dynamics simulations. At a critical value of applied strain parallel to the interface, a crack forms on the silicon nitride surface and moves toward the interface. The crack does not propagate into the silicon substrate; instead, dislocations are emitted when the crack reaches the interface. The dislocation loop propagates in the (1; 1;1) plane of the silicon substrate with a speed of 500 (+/-100) m/s. Time evolution of the dislocation emission and nature of defects is studied. SN - 1079-7114 UR - https://www.unboundmedicine.com/medline/citation/11015901/Dislocation_emission_at_the_Silicon/Silicon_nitride_interface:_A_million_atom_molecular_dynamics_simulation_on_parallel_computers L2 - http://link.aps.org/abstract/PRL/v84/p322 DB - PRIME DP - Unbound Medicine ER -
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