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Domain wall creep in epitaxial ferroelectric Pb(Zr(0.2)Ti(0.08)O(3) thin films.
Phys Rev Lett 2002; 89(9):097601PR

Abstract

Ferroelectric switching and nanoscale domain dynamics were investigated using atomic force microscopy on monocrystalline Pb(Zr(0.2)Ti(0.8))O(3) thin films. Measurements of domain size versus writing time reveal a two-step domain growth mechanism, in which initial nucleation is followed by radial domain wall motion perpendicular to the polarization direction. The electric field dependence of the domain wall velocity demonstrates that domain wall motion in ferroelectric thin films is a creep process, with the critical exponent mu close to 1. The dimensionality of the films suggests that disorder is at the origin of the observed creep behavior.

Authors+Show Affiliations

DPMC, University of Geneva, 24 Quai Ernest Ansermet, 1211 Geneva 4, Switzerland.No affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article

Language

eng

PubMed ID

12190438

Citation

Tybell, T, et al. "Domain Wall Creep in Epitaxial Ferroelectric Pb(Zr(0.2)Ti(0.08)O(3) Thin Films." Physical Review Letters, vol. 89, no. 9, 2002, p. 097601.
Tybell T, Paruch P, Giamarchi T, et al. Domain wall creep in epitaxial ferroelectric Pb(Zr(0.2)Ti(0.08)O(3) thin films. Phys Rev Lett. 2002;89(9):097601.
Tybell, T., Paruch, P., Giamarchi, T., & Triscone, J. M. (2002). Domain wall creep in epitaxial ferroelectric Pb(Zr(0.2)Ti(0.08)O(3) thin films. Physical Review Letters, 89(9), p. 097601.
Tybell T, et al. Domain Wall Creep in Epitaxial Ferroelectric Pb(Zr(0.2)Ti(0.08)O(3) Thin Films. Phys Rev Lett. 2002 Aug 26;89(9):097601. PubMed PMID: 12190438.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Domain wall creep in epitaxial ferroelectric Pb(Zr(0.2)Ti(0.08)O(3) thin films. AU - Tybell,T, AU - Paruch,P, AU - Giamarchi,T, AU - Triscone,J-M, Y1 - 2002/08/09/ PY - 2002/03/18/received PY - 2002/8/23/pubmed PY - 2002/8/23/medline PY - 2002/8/23/entrez SP - 097601 EP - 097601 JF - Physical review letters JO - Phys. Rev. Lett. VL - 89 IS - 9 N2 - Ferroelectric switching and nanoscale domain dynamics were investigated using atomic force microscopy on monocrystalline Pb(Zr(0.2)Ti(0.8))O(3) thin films. Measurements of domain size versus writing time reveal a two-step domain growth mechanism, in which initial nucleation is followed by radial domain wall motion perpendicular to the polarization direction. The electric field dependence of the domain wall velocity demonstrates that domain wall motion in ferroelectric thin films is a creep process, with the critical exponent mu close to 1. The dimensionality of the films suggests that disorder is at the origin of the observed creep behavior. SN - 0031-9007 UR - https://www.unboundmedicine.com/medline/citation/12190438/Domain_wall_creep_in_epitaxial_ferroelectric_Pb_Zr_0_2_Ti_0_08_O_3__thin_films_ L2 - http://link.aps.org/abstract/PRL/v89/p097601 DB - PRIME DP - Unbound Medicine ER -