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Validation of metal oxide semiconductor field effect transistor technology for organ dose assessment during CT: comparison with thermoluminescent dosimetry.
AJR Am J Roentgenol. 2007 May; 188(5):1332-6.AA

Abstract

OBJECTIVE

The purposes of this study were to apply near-real-time dose-measurement technology with metal oxide semiconductor field effect transistors (MOSFETs) to the assessment of organ dose during CT and to validate the method in comparison with the thermoluminescent dosimeter (TLD) method.

MATERIALS AND METHODS

Dosimetry measurements were performed in two ways, one with TLDs and the other with MOSFETs. Twenty organ locations were selected in an adult anthropomorphic female phantom. High-sensitivity MOSFET dosimeters were used. For the reference standard, TLDs were placed in the same organ locations as the MOSFETs. Both MOSFET and TLD detectors were calibrated with an X-ray beam equivalent in quality to that of a commercial CT scanner (half-value layer, approximately 7 mm Al at 120 kVp). Organ dose was determined with a scan protocol for pulmonary embolus studies on a 4-MDCT scanner.

RESULTS

Measurements for selected organ doses and the percentage difference for TLDs and MOSFETs, respectively, were as follows: thyroid (0.34 cGy, 0.31 cGy, -8%), middle lobe of lung (2.4 cGy, 3.0 cGy, +26%), bone marrow of thoracic spine (2.2 cGy, 2.5 cGy, +11%), stomach (1.0 cGy, 0.93 cGy, -6%), liver (2.5 cGy, 2.6 cGy, +6%), and left breast (3.0 cGy, 2.9 cGy, -1%). Bland-Altman analysis showed that the MOSFET results agreed with the TLD results (bias, 0.042).

CONCLUSION

We found good agreement between the results with the MOSFET and TLD methods. Near-real-time CT organ dose assessment not previously feasible with TLDs was achieved with MOSFETs. MOSFET technology can be used for protocol development in the rapidly changing MDCT scanner environment, in which organ dose data are extremely limited.

Authors+Show Affiliations

Department of Radiology, Duke University Medical Center, Box 3155, Durham, NC 27710, USA. yoshi003@mc.duke.eduNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Comparative Study
Journal Article
Validation Study

Language

eng

PubMed ID

17449779

Citation

Yoshizumi, Terry T., et al. "Validation of Metal Oxide Semiconductor Field Effect Transistor Technology for Organ Dose Assessment During CT: Comparison With Thermoluminescent Dosimetry." AJR. American Journal of Roentgenology, vol. 188, no. 5, 2007, pp. 1332-6.
Yoshizumi TT, Goodman PC, Frush DP, et al. Validation of metal oxide semiconductor field effect transistor technology for organ dose assessment during CT: comparison with thermoluminescent dosimetry. AJR Am J Roentgenol. 2007;188(5):1332-6.
Yoshizumi, T. T., Goodman, P. C., Frush, D. P., Nguyen, G., Toncheva, G., Sarder, M., & Barnes, L. (2007). Validation of metal oxide semiconductor field effect transistor technology for organ dose assessment during CT: comparison with thermoluminescent dosimetry. AJR. American Journal of Roentgenology, 188(5), 1332-6.
Yoshizumi TT, et al. Validation of Metal Oxide Semiconductor Field Effect Transistor Technology for Organ Dose Assessment During CT: Comparison With Thermoluminescent Dosimetry. AJR Am J Roentgenol. 2007;188(5):1332-6. PubMed PMID: 17449779.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Validation of metal oxide semiconductor field effect transistor technology for organ dose assessment during CT: comparison with thermoluminescent dosimetry. AU - Yoshizumi,Terry T, AU - Goodman,Philip C, AU - Frush,Donald P, AU - Nguyen,Giao, AU - Toncheva,Greta, AU - Sarder,Maksudur, AU - Barnes,Lottie, PY - 2007/4/24/pubmed PY - 2007/5/2/medline PY - 2007/4/24/entrez SP - 1332 EP - 6 JF - AJR. American journal of roentgenology JO - AJR Am J Roentgenol VL - 188 IS - 5 N2 - OBJECTIVE: The purposes of this study were to apply near-real-time dose-measurement technology with metal oxide semiconductor field effect transistors (MOSFETs) to the assessment of organ dose during CT and to validate the method in comparison with the thermoluminescent dosimeter (TLD) method. MATERIALS AND METHODS: Dosimetry measurements were performed in two ways, one with TLDs and the other with MOSFETs. Twenty organ locations were selected in an adult anthropomorphic female phantom. High-sensitivity MOSFET dosimeters were used. For the reference standard, TLDs were placed in the same organ locations as the MOSFETs. Both MOSFET and TLD detectors were calibrated with an X-ray beam equivalent in quality to that of a commercial CT scanner (half-value layer, approximately 7 mm Al at 120 kVp). Organ dose was determined with a scan protocol for pulmonary embolus studies on a 4-MDCT scanner. RESULTS: Measurements for selected organ doses and the percentage difference for TLDs and MOSFETs, respectively, were as follows: thyroid (0.34 cGy, 0.31 cGy, -8%), middle lobe of lung (2.4 cGy, 3.0 cGy, +26%), bone marrow of thoracic spine (2.2 cGy, 2.5 cGy, +11%), stomach (1.0 cGy, 0.93 cGy, -6%), liver (2.5 cGy, 2.6 cGy, +6%), and left breast (3.0 cGy, 2.9 cGy, -1%). Bland-Altman analysis showed that the MOSFET results agreed with the TLD results (bias, 0.042). CONCLUSION: We found good agreement between the results with the MOSFET and TLD methods. Near-real-time CT organ dose assessment not previously feasible with TLDs was achieved with MOSFETs. MOSFET technology can be used for protocol development in the rapidly changing MDCT scanner environment, in which organ dose data are extremely limited. SN - 1546-3141 UR - https://www.unboundmedicine.com/medline/citation/17449779/Validation_of_metal_oxide_semiconductor_field_effect_transistor_technology_for_organ_dose_assessment_during_CT:_comparison_with_thermoluminescent_dosimetry_ L2 - https://www.ajronline.org/doi/10.2214/AJR.06.0742 DB - PRIME DP - Unbound Medicine ER -