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Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics.
J Nanosci Nanotechnol. 2007 Nov; 7(11):4101-5.JN

Abstract

We report the fabrication and electrical characterization of ZnO nanowire field effect transistors (FETs). Dielectrophoresis technique was used to directly align ZnO nanowires between lithographically prepatterned source and drain electrodes, and spin-coated polyvinylphenol (PVP) polymer thin layer was used as a gate dielectric layer in "top-gate" FET device configuration. The electrical characteristics of the top-gate ZnO nanowire FETs were found to be comparable to the conventional "bottom-gate" nanowire FETs with a SiO2 gate dielectric layer, suggesting the directly-assembled nanowire FET with a polymer gate dielectric layer is a useful device structure of nanowire FETs.

Authors+Show Affiliations

Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea.No affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

18047128

Citation

Yoon, Ahnsook, et al. "Fabrication and Characterization of Directly-assembled ZnO Nanowire Field Effect Transistors With Polymer Gate Dielectrics." Journal of Nanoscience and Nanotechnology, vol. 7, no. 11, 2007, pp. 4101-5.
Yoon A, Hong WK, Lee T. Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics. J Nanosci Nanotechnol. 2007;7(11):4101-5.
Yoon, A., Hong, W. K., & Lee, T. (2007). Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics. Journal of Nanoscience and Nanotechnology, 7(11), 4101-5.
Yoon A, Hong WK, Lee T. Fabrication and Characterization of Directly-assembled ZnO Nanowire Field Effect Transistors With Polymer Gate Dielectrics. J Nanosci Nanotechnol. 2007;7(11):4101-5. PubMed PMID: 18047128.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics. AU - Yoon,Ahnsook, AU - Hong,Woong-Ki, AU - Lee,Takhee, PY - 2007/12/1/pubmed PY - 2008/1/4/medline PY - 2007/12/1/entrez SP - 4101 EP - 5 JF - Journal of nanoscience and nanotechnology JO - J Nanosci Nanotechnol VL - 7 IS - 11 N2 - We report the fabrication and electrical characterization of ZnO nanowire field effect transistors (FETs). Dielectrophoresis technique was used to directly align ZnO nanowires between lithographically prepatterned source and drain electrodes, and spin-coated polyvinylphenol (PVP) polymer thin layer was used as a gate dielectric layer in "top-gate" FET device configuration. The electrical characteristics of the top-gate ZnO nanowire FETs were found to be comparable to the conventional "bottom-gate" nanowire FETs with a SiO2 gate dielectric layer, suggesting the directly-assembled nanowire FET with a polymer gate dielectric layer is a useful device structure of nanowire FETs. SN - 1533-4880 UR - https://www.unboundmedicine.com/medline/citation/18047128/Fabrication_and_characterization_of_directly_assembled_ZnO_nanowire_field_effect_transistors_with_polymer_gate_dielectrics_ DB - PRIME DP - Unbound Medicine ER -