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Fabrication of poly-silicon nano-wire transistors on plastic substrates.
J Nanosci Nanotechnol. 2007 Nov; 7(11):4150-3.JN

Abstract

We report the fabrication and characterization of poly-Si nanowire transistors on flexible substrates. The nanowire transistors are fabricated on a SiO2/Si substrate using conventional CMOS processes, and then they are transferred onto polyimide substrates. The transfer process is performed by spin-coating of polyimide, curing (annealing) of the polyimide layer, and removal of the SiO2 sacrificial layer. The optimized curing condition results in the maximum bending of 150 degrees with full recovery. The nanowire transistors exhibit transistor characteristics as a function of the backgate bias. Our new process can be applied to the fabrication of Si-nanowire transistors with larger mobilities.

Authors+Show Affiliations

School of Electrical Engineering, Korea University, 5-1 Anam, Sungbuk, Seoul 136-701, Korea.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

18047139

Citation

Park, ChangMin, et al. "Fabrication of Poly-silicon Nano-wire Transistors On Plastic Substrates." Journal of Nanoscience and Nanotechnology, vol. 7, no. 11, 2007, pp. 4150-3.
Park C, Lee S, Choi M, et al. Fabrication of poly-silicon nano-wire transistors on plastic substrates. J Nanosci Nanotechnol. 2007;7(11):4150-3.
Park, C., Lee, S., Choi, M., Kang, M., Jung, Y., Hwang, S., Ahn, D., Lee, J., & Song, C. (2007). Fabrication of poly-silicon nano-wire transistors on plastic substrates. Journal of Nanoscience and Nanotechnology, 7(11), 4150-3.
Park C, et al. Fabrication of Poly-silicon Nano-wire Transistors On Plastic Substrates. J Nanosci Nanotechnol. 2007;7(11):4150-3. PubMed PMID: 18047139.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Fabrication of poly-silicon nano-wire transistors on plastic substrates. AU - Park,ChangMin, AU - Lee,SeHan, AU - Choi,MinSu, AU - Kang,MyungGil, AU - Jung,YoungChai, AU - Hwang,SungWoo, AU - Ahn,Doyeol, AU - Lee,JungHyeon, AU - Song,ChangRyong, PY - 2007/12/1/pubmed PY - 2008/1/4/medline PY - 2007/12/1/entrez SP - 4150 EP - 3 JF - Journal of nanoscience and nanotechnology JO - J Nanosci Nanotechnol VL - 7 IS - 11 N2 - We report the fabrication and characterization of poly-Si nanowire transistors on flexible substrates. The nanowire transistors are fabricated on a SiO2/Si substrate using conventional CMOS processes, and then they are transferred onto polyimide substrates. The transfer process is performed by spin-coating of polyimide, curing (annealing) of the polyimide layer, and removal of the SiO2 sacrificial layer. The optimized curing condition results in the maximum bending of 150 degrees with full recovery. The nanowire transistors exhibit transistor characteristics as a function of the backgate bias. Our new process can be applied to the fabrication of Si-nanowire transistors with larger mobilities. SN - 1533-4880 UR - https://www.unboundmedicine.com/medline/citation/18047139/Fabrication_of_poly_silicon_nano_wire_transistors_on_plastic_substrates_ DB - PRIME DP - Unbound Medicine ER -