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Operation of graphene transistors at gigahertz frequencies.
. 2009 Jan; 9(1):422-6.

Abstract

Top-gated graphene transistors operating at high frequencies (gigahertz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating a FET-like behavior for graphene transistors. The cutoff frequency f(T) is found to be proportional to the dc transconductance g(m) of the device, consistent with the relation f(T) = g(m)/(2piC(G)). The peak f(T) increases with a reduced gate length, and f(T) as high as 26 GHz is measured for a graphene transistor with a gate length of 150 nm. The work represents a significant step toward the realization of graphene-based electronics for high-frequency applications.

Authors+Show Affiliations

IBM T.J. Watson Research Center, Yorktown Heights, New York 10598. yming@us.ibm.comNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Evaluation Study
Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

19099364

Citation

Lin, Yu-Ming, et al. "Operation of Graphene Transistors at Gigahertz Frequencies." Nano Letters, vol. 9, no. 1, 2009, pp. 422-6.
Lin YM, Jenkins KA, Valdes-Garcia A, et al. Operation of graphene transistors at gigahertz frequencies. Nano Lett. 2009;9(1):422-6.
Lin, Y. M., Jenkins, K. A., Valdes-Garcia, A., Small, J. P., Farmer, D. B., & Avouris, P. (2009). Operation of graphene transistors at gigahertz frequencies. Nano Letters, 9(1), 422-6. https://doi.org/10.1021/nl803316h
Lin YM, et al. Operation of Graphene Transistors at Gigahertz Frequencies. Nano Lett. 2009;9(1):422-6. PubMed PMID: 19099364.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Operation of graphene transistors at gigahertz frequencies. AU - Lin,Yu-Ming, AU - Jenkins,Keith A, AU - Valdes-Garcia,Alberto, AU - Small,Joshua P, AU - Farmer,Damon B, AU - Avouris,Phaedon, PY - 2008/12/23/entrez PY - 2008/12/23/pubmed PY - 2009/3/31/medline SP - 422 EP - 6 JF - Nano letters JO - Nano Lett. VL - 9 IS - 1 N2 - Top-gated graphene transistors operating at high frequencies (gigahertz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating a FET-like behavior for graphene transistors. The cutoff frequency f(T) is found to be proportional to the dc transconductance g(m) of the device, consistent with the relation f(T) = g(m)/(2piC(G)). The peak f(T) increases with a reduced gate length, and f(T) as high as 26 GHz is measured for a graphene transistor with a gate length of 150 nm. The work represents a significant step toward the realization of graphene-based electronics for high-frequency applications. SN - 1530-6984 UR - https://www.unboundmedicine.com/medline/citation/19099364/Operation_of_graphene_transistors_at_gigahertz_frequencies_ L2 - https://doi.org/10.1021/nl803316h DB - PRIME DP - Unbound Medicine ER -