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A novel method for fabricating sub-16 nm footprint T-gate nanoimprint molds.
Nanotechnology. 2009 May 06; 20(18):185302.N

Abstract

A novel method for fabricating nanoimprint lithography (NIL) molds for T-shaped gates (T-gates) for high speed transistors is proposed and demonstrated. This method uses NIL, low pressure chemical vapor deposition and reactive ion etching processes, and avoids costly electron beam lithography and high accuracy alignment technology. Using the T-gate nanoimprint molds fabricated by this novel method, T-gates with a footprint as small as sub-16 nm were achieved. This method can be extended to fabricate a broad range of 3D nanostructures.

Authors+Show Affiliations

NanoStructure Laboratory, Electrical Engineering Department, Princeton University, Princeton, NJ 08544, USA.No affiliation info availableNo affiliation info available

Pub Type(s)

Evaluation Study
Journal Article

Language

eng

PubMed ID

19420609

Citation

Peng, Can, et al. "A Novel Method for Fabricating Sub-16 Nm Footprint T-gate Nanoimprint Molds." Nanotechnology, vol. 20, no. 18, 2009, p. 185302.
Peng C, Liang X, Chou SY. A novel method for fabricating sub-16 nm footprint T-gate nanoimprint molds. Nanotechnology. 2009;20(18):185302.
Peng, C., Liang, X., & Chou, S. Y. (2009). A novel method for fabricating sub-16 nm footprint T-gate nanoimprint molds. Nanotechnology, 20(18), 185302. https://doi.org/10.1088/0957-4484/20/18/185302
Peng C, Liang X, Chou SY. A Novel Method for Fabricating Sub-16 Nm Footprint T-gate Nanoimprint Molds. Nanotechnology. 2009 May 6;20(18):185302. PubMed PMID: 19420609.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - A novel method for fabricating sub-16 nm footprint T-gate nanoimprint molds. AU - Peng,Can, AU - Liang,Xiaogan, AU - Chou,Stephen Y, Y1 - 2009/04/14/ PY - 2009/5/8/entrez PY - 2009/5/8/pubmed PY - 2009/7/7/medline SP - 185302 EP - 185302 JF - Nanotechnology JO - Nanotechnology VL - 20 IS - 18 N2 - A novel method for fabricating nanoimprint lithography (NIL) molds for T-shaped gates (T-gates) for high speed transistors is proposed and demonstrated. This method uses NIL, low pressure chemical vapor deposition and reactive ion etching processes, and avoids costly electron beam lithography and high accuracy alignment technology. Using the T-gate nanoimprint molds fabricated by this novel method, T-gates with a footprint as small as sub-16 nm were achieved. This method can be extended to fabricate a broad range of 3D nanostructures. SN - 1361-6528 UR - https://www.unboundmedicine.com/medline/citation/19420609/A_novel_method_for_fabricating_sub_16_nm_footprint_T_gate_nanoimprint_molds_ L2 - https://doi.org/10.1088/0957-4484/20/18/185302 DB - PRIME DP - Unbound Medicine ER -