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Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors.
Nano Lett. 2009 Dec; 9(12):4474-8.NL

Abstract

We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in top-gate operation. This is demonstrated in both two-point and four-point analysis and in the high-frequency operation of a graphene transistor. Temperature dependence of the carrier mobility suggests that phonons are the dominant scatterers in these devices.

Authors+Show Affiliations

IBM TJ Watson Research Center, Yorktown Heights, New York 10598, USA. dfarmer@us.ibm.comNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, U.S. Gov't, Non-P.H.S.

Language

eng

PubMed ID

19883119

Citation

Farmer, Damon B., et al. "Utilization of a Buffered Dielectric to Achieve High Field-effect Carrier Mobility in Graphene Transistors." Nano Letters, vol. 9, no. 12, 2009, pp. 4474-8.
Farmer DB, Chiu HY, Lin YM, et al. Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors. Nano Lett. 2009;9(12):4474-8.
Farmer, D. B., Chiu, H. Y., Lin, Y. M., Jenkins, K. A., Xia, F., & Avouris, P. (2009). Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors. Nano Letters, 9(12), 4474-8. https://doi.org/10.1021/nl902788u
Farmer DB, et al. Utilization of a Buffered Dielectric to Achieve High Field-effect Carrier Mobility in Graphene Transistors. Nano Lett. 2009;9(12):4474-8. PubMed PMID: 19883119.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors. AU - Farmer,Damon B, AU - Chiu,Hsin-Ying, AU - Lin,Yu-Ming, AU - Jenkins,Keith A, AU - Xia,Fengnian, AU - Avouris,Phaedon, PY - 2009/11/4/entrez PY - 2009/11/4/pubmed PY - 2010/2/23/medline SP - 4474 EP - 8 JF - Nano letters JO - Nano Lett VL - 9 IS - 12 N2 - We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in top-gate operation. This is demonstrated in both two-point and four-point analysis and in the high-frequency operation of a graphene transistor. Temperature dependence of the carrier mobility suggests that phonons are the dominant scatterers in these devices. SN - 1530-6992 UR - https://www.unboundmedicine.com/medline/citation/19883119/Utilization_of_a_buffered_dielectric_to_achieve_high_field_effect_carrier_mobility_in_graphene_transistors_ L2 - https://doi.org/10.1021/nl902788u DB - PRIME DP - Unbound Medicine ER -