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Sputtered SiO2 as low acoustic impedance material for Bragg mirror fabrication in BAW resonators.
IEEE Trans Ultrason Ferroelectr Freq Control. 2010 Jan; 57(1):23-9.IT

Abstract

In this paper we describe the procedure to sputter low acoustic impedance SiO(2) films to be used as a low acoustic impedance layer in Bragg mirrors for BAW resonators. The composition and structure of the material are assessed through infrared absorption spectroscopy. The acoustic properties of the films (mass density and sound velocity) are assessed through X-ray reflectometry and picosecond acoustic spectroscopy. A second measurement of the sound velocity is achieved through the analysis of the longitudinal lambda/2 resonance that appears in these silicon oxide films when used as uppermost layer of an acoustic reflector placed under an AlN-based resonator.

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Publisher Full Text (DOI)

Authors+Show Affiliations

Olivares J
Grupo de Microsistemas y Materiales Electronicos of Universidad Politecnica de Madrid, Madrid, Spain. olivares@etsit.upm.es
Wegmann E
No affiliation info available
Capilla J
No affiliation info available
Iborra E
No affiliation info available
Clement M
No affiliation info available
Vergara L
No affiliation info available
Aigner R
No affiliation info available

MeSH

AcousticsComputer-Aided DesignElectric ImpedanceEquipment DesignEquipment Failure AnalysisLensesMicro-Electrical-Mechanical SystemsRefractometryReproducibility of ResultsSensitivity and SpecificitySilicon DioxideTransducersVibration

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

20040422

Citation

Olivares, Jimena, et al. "Sputtered SiO2 as Low Acoustic Impedance Material for Bragg Mirror Fabrication in BAW Resonators." IEEE Transactions On Ultrasonics, Ferroelectrics, and Frequency Control, vol. 57, no. 1, 2010, pp. 23-9.
Olivares J, Wegmann E, Capilla J, et al. Sputtered SiO2 as low acoustic impedance material for Bragg mirror fabrication in BAW resonators. IEEE Trans Ultrason Ferroelectr Freq Control. 2010;57(1):23-9.
Olivares, J., Wegmann, E., Capilla, J., Iborra, E., Clement, M., Vergara, L., & Aigner, R. (2010). Sputtered SiO2 as low acoustic impedance material for Bragg mirror fabrication in BAW resonators. IEEE Transactions On Ultrasonics, Ferroelectrics, and Frequency Control, 57(1), 23-9. https://doi.org/10.1109/TUFFC.2010.1374
Olivares J, et al. Sputtered SiO2 as Low Acoustic Impedance Material for Bragg Mirror Fabrication in BAW Resonators. IEEE Trans Ultrason Ferroelectr Freq Control. 2010;57(1):23-9. PubMed PMID: 20040422.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Sputtered SiO2 as low acoustic impedance material for Bragg mirror fabrication in BAW resonators. AU - Olivares,Jimena, AU - Wegmann,Enrique, AU - Capilla,José, AU - Iborra,Enrique, AU - Clement,Marta, AU - Vergara,Lucía, AU - Aigner,Robert, PY - 2009/12/31/entrez PY - 2009/12/31/pubmed PY - 2010/3/11/medline SP - 23 EP - 9 JF - IEEE transactions on ultrasonics, ferroelectrics, and frequency control JO - IEEE Trans Ultrason Ferroelectr Freq Control VL - 57 IS - 1 N2 - In this paper we describe the procedure to sputter low acoustic impedance SiO(2) films to be used as a low acoustic impedance layer in Bragg mirrors for BAW resonators. The composition and structure of the material are assessed through infrared absorption spectroscopy. The acoustic properties of the films (mass density and sound velocity) are assessed through X-ray reflectometry and picosecond acoustic spectroscopy. A second measurement of the sound velocity is achieved through the analysis of the longitudinal lambda/2 resonance that appears in these silicon oxide films when used as uppermost layer of an acoustic reflector placed under an AlN-based resonator. SN - 1525-8955 UR - https://www.unboundmedicine.com/medline/citation/20040422/Sputtered_SiO2_as_low_acoustic_impedance_material_for_Bragg_mirror_fabrication_in_BAW_resonators_ L2 - https://dx.doi.org/10.1109/TUFFC.2010.1374 DB - PRIME DP - Unbound Medicine ER -