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Super-high-frequency two-port AlN contour-mode resonators for RF applications.
IEEE Trans Ultrason Ferroelectr Freq Control. 2010 Jan; 57(1):38-45.IT

Abstract

This paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhigh- frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contour-extensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt(2), in excess of 1.5%. These devices are employed to synthesize the highest frequency MEMS filter (3.7 GHz) based on AlN contour-mode resonator technology ever reported.

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Publisher Full Text (DOI)

Authors+Show Affiliations

Rinaldi M
Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA. rinaldim@seas.upenn.edu
Zuniga C
No affiliation info available
Zuo C
No affiliation info available
Piazza G
No affiliation info available

MeSH

AcousticsComputer-Aided DesignEquipment DesignEquipment Failure AnalysisMembranes, ArtificialMicro-Electrical-Mechanical SystemsRadio WavesReproducibility of ResultsSensitivity and SpecificityTransducersVibration

Pub Type(s)

Journal Article
Research Support, U.S. Gov't, Non-P.H.S.

Language

eng

PubMed ID

20040424

Citation

Rinaldi, Matteo, et al. "Super-high-frequency Two-port AlN Contour-mode Resonators for RF Applications." IEEE Transactions On Ultrasonics, Ferroelectrics, and Frequency Control, vol. 57, no. 1, 2010, pp. 38-45.
Rinaldi M, Zuniga C, Zuo C, et al. Super-high-frequency two-port AlN contour-mode resonators for RF applications. IEEE Trans Ultrason Ferroelectr Freq Control. 2010;57(1):38-45.
Rinaldi, M., Zuniga, C., Zuo, C., & Piazza, G. (2010). Super-high-frequency two-port AlN contour-mode resonators for RF applications. IEEE Transactions On Ultrasonics, Ferroelectrics, and Frequency Control, 57(1), 38-45. https://doi.org/10.1109/TUFFC.2010.1376
Rinaldi M, et al. Super-high-frequency Two-port AlN Contour-mode Resonators for RF Applications. IEEE Trans Ultrason Ferroelectr Freq Control. 2010;57(1):38-45. PubMed PMID: 20040424.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Super-high-frequency two-port AlN contour-mode resonators for RF applications. AU - Rinaldi,Matteo, AU - Zuniga,Chiara, AU - Zuo,Chengjie, AU - Piazza,Gianluca, PY - 2009/12/31/entrez PY - 2009/12/31/pubmed PY - 2010/3/11/medline SP - 38 EP - 45 JF - IEEE transactions on ultrasonics, ferroelectrics, and frequency control JO - IEEE Trans Ultrason Ferroelectr Freq Control VL - 57 IS - 1 N2 - This paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhigh- frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contour-extensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt(2), in excess of 1.5%. These devices are employed to synthesize the highest frequency MEMS filter (3.7 GHz) based on AlN contour-mode resonator technology ever reported. SN - 1525-8955 UR - https://www.unboundmedicine.com/medline/citation/20040424/Super_high_frequency_two_port_AlN_contour_mode_resonators_for_RF_applications_ L2 - https://dx.doi.org/10.1109/TUFFC.2010.1376 DB - PRIME DP - Unbound Medicine ER -