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Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.
Nat Nanotechnol 2010; 5(2):148-53NN

Abstract

Resistance switching in metal oxides could form the basis for next-generation non-volatile memory. It has been argued that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only indirectly, limiting our understanding of the switching mechanism. Here, we use high-resolution transmission electron microscopy to probe directly the nanofilaments in a Pt/TiO(2)/Pt system during resistive switching. In situ current-voltage and low-temperature (approximately 130 K) conductivity measurements confirm that switching occurs by the formation and disruption of Ti(n)O(2n-1) (or so-called Magnéli phase) filaments. Knowledge of the composition, structure and dimensions of these filaments will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films, and help guide research into the stability and scalability of such films for applications.

Authors+Show Affiliations

Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

20081847

Citation

Kwon, Deok-Hwang, et al. "Atomic Structure of Conducting Nanofilaments in TiO2 Resistive Switching Memory." Nature Nanotechnology, vol. 5, no. 2, 2010, pp. 148-53.
Kwon DH, Kim KM, Jang JH, et al. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. Nat Nanotechnol. 2010;5(2):148-53.
Kwon, D. H., Kim, K. M., Jang, J. H., Jeon, J. M., Lee, M. H., Kim, G. H., ... Hwang, C. S. (2010). Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. Nature Nanotechnology, 5(2), pp. 148-53. doi:10.1038/nnano.2009.456.
Kwon DH, et al. Atomic Structure of Conducting Nanofilaments in TiO2 Resistive Switching Memory. Nat Nanotechnol. 2010;5(2):148-53. PubMed PMID: 20081847.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. AU - Kwon,Deok-Hwang, AU - Kim,Kyung Min, AU - Jang,Jae Hyuck, AU - Jeon,Jong Myeong, AU - Lee,Min Hwan, AU - Kim,Gun Hwan, AU - Li,Xiang-Shu, AU - Park,Gyeong-Su, AU - Lee,Bora, AU - Han,Seungwu, AU - Kim,Miyoung, AU - Hwang,Cheol Seong, Y1 - 2010/01/17/ PY - 2009/10/06/received PY - 2009/11/25/accepted PY - 2010/1/19/entrez PY - 2010/1/19/pubmed PY - 2010/4/17/medline SP - 148 EP - 53 JF - Nature nanotechnology JO - Nat Nanotechnol VL - 5 IS - 2 N2 - Resistance switching in metal oxides could form the basis for next-generation non-volatile memory. It has been argued that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only indirectly, limiting our understanding of the switching mechanism. Here, we use high-resolution transmission electron microscopy to probe directly the nanofilaments in a Pt/TiO(2)/Pt system during resistive switching. In situ current-voltage and low-temperature (approximately 130 K) conductivity measurements confirm that switching occurs by the formation and disruption of Ti(n)O(2n-1) (or so-called Magnéli phase) filaments. Knowledge of the composition, structure and dimensions of these filaments will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films, and help guide research into the stability and scalability of such films for applications. SN - 1748-3395 UR - https://www.unboundmedicine.com/medline/citation/20081847/Atomic_structure_of_conducting_nanofilaments_in_TiO2_resistive_switching_memory_ L2 - https://www.lens.org/lens/search?q=citation_id:20081847 DB - PRIME DP - Unbound Medicine ER -