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High-kappa oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors.
Proc Natl Acad Sci U S A. 2010 Apr 13; 107(15):6711-5.PN

Abstract

Deposition of high-kappa dielectrics onto graphene is of significant challenge due to the difficulties of nucleating high quality oxide on pristine graphene without introducing defects into the monolayer of carbon lattice. Previous efforts to deposit high-kappa dielectrics on graphene often resulted in significant degradation in carrier mobility. Here we report an entirely new strategy to integrate high quality high-kappa dielectrics with graphene by first synthesizing freestanding high-kappa oxide nanoribbons at high temperature and then transferring them onto graphene at room temperature. We show that single crystalline Al(2)O(3) nanoribbons can be synthesized with excellent dielectric properties. Using such nanoribbons as the gate dielectrics, we have demonstrated top-gated graphene transistors with the highest carrier mobility (up to 23,600 cm(2)/V x s) reported to date, and a more than 10-fold increase in transconductance compared to the back-gated devices. This method opens a new avenue to integrate high-kappa dielectrics on graphene with the preservation of the pristine nature of graphene and high carrier mobility, representing an important step forward to high-performance graphene electronics.

Authors+Show Affiliations

Department of Chemistry and Biochemistry, University of California, Los Angeles, CA 90095, USA.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, N.I.H., Extramural
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

20308584

Citation

Liao, Lei, et al. "High-kappa Oxide Nanoribbons as Gate Dielectrics for High Mobility Top-gated Graphene Transistors." Proceedings of the National Academy of Sciences of the United States of America, vol. 107, no. 15, 2010, pp. 6711-5.
Liao L, Bai J, Qu Y, et al. High-kappa oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors. Proc Natl Acad Sci USA. 2010;107(15):6711-5.
Liao, L., Bai, J., Qu, Y., Lin, Y. C., Li, Y., Huang, Y., & Duan, X. (2010). High-kappa oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors. Proceedings of the National Academy of Sciences of the United States of America, 107(15), 6711-5. https://doi.org/10.1073/pnas.0914117107
Liao L, et al. High-kappa Oxide Nanoribbons as Gate Dielectrics for High Mobility Top-gated Graphene Transistors. Proc Natl Acad Sci USA. 2010 Apr 13;107(15):6711-5. PubMed PMID: 20308584.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - High-kappa oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors. AU - Liao,Lei, AU - Bai,Jingwei, AU - Qu,Yongquan, AU - Lin,Yung-chen, AU - Li,Yujing, AU - Huang,Yu, AU - Duan,Xiangfeng, Y1 - 2010/03/22/ PY - 2010/3/24/entrez PY - 2010/3/24/pubmed PY - 2010/5/15/medline SP - 6711 EP - 5 JF - Proceedings of the National Academy of Sciences of the United States of America JO - Proc. Natl. Acad. Sci. U.S.A. VL - 107 IS - 15 N2 - Deposition of high-kappa dielectrics onto graphene is of significant challenge due to the difficulties of nucleating high quality oxide on pristine graphene without introducing defects into the monolayer of carbon lattice. Previous efforts to deposit high-kappa dielectrics on graphene often resulted in significant degradation in carrier mobility. Here we report an entirely new strategy to integrate high quality high-kappa dielectrics with graphene by first synthesizing freestanding high-kappa oxide nanoribbons at high temperature and then transferring them onto graphene at room temperature. We show that single crystalline Al(2)O(3) nanoribbons can be synthesized with excellent dielectric properties. Using such nanoribbons as the gate dielectrics, we have demonstrated top-gated graphene transistors with the highest carrier mobility (up to 23,600 cm(2)/V x s) reported to date, and a more than 10-fold increase in transconductance compared to the back-gated devices. This method opens a new avenue to integrate high-kappa dielectrics on graphene with the preservation of the pristine nature of graphene and high carrier mobility, representing an important step forward to high-performance graphene electronics. SN - 1091-6490 UR - https://www.unboundmedicine.com/medline/citation/20308584/High_kappa_oxide_nanoribbons_as_gate_dielectrics_for_high_mobility_top_gated_graphene_transistors_ L2 - http://www.pnas.org/cgi/pmidlookup?view=long&pmid=20308584 DB - PRIME DP - Unbound Medicine ER -