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High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis.
Nanotechnology. 2010 Apr 23; 21(16):165202.N

Abstract

We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets. The RGO sheets suspended in water were assembled between prefabricated gold source and drain electrodes using ac dielectrophoresis. With the application of a backgate voltage, 60% of the devices showed p-type FET behavior, while the remaining 40% showed ambipolar behavior. After mild thermal annealing at 200 degrees C, all ambipolar RGO FET remained ambipolar with increased hole and electron mobility, while 60% of the p-type RGO devices were transformed to ambipolar. The maximum hole and electron mobilities of the devices were 4.0 and 1.5 cm(2) V(- 1) s(- 1) respectively. High yield assembly of chemically derived RGO FET will have significant impact in scaled up fabrication of graphene based nanoelectronic devices.

Authors+Show Affiliations

Nanoscience Technology Center, University of Central Florida, Orlando, FL 32826, USA. Department of Physics, University of Central Florida, Orlando, FL 32826, USA.No affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

20348593

Citation

Joung, Daeha, et al. "High Yield Fabrication of Chemically Reduced Graphene Oxide Field Effect Transistors By Dielectrophoresis." Nanotechnology, vol. 21, no. 16, 2010, p. 165202.
Joung D, Chunder A, Zhai L, et al. High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis. Nanotechnology. 2010;21(16):165202.
Joung, D., Chunder, A., Zhai, L., & Khondaker, S. I. (2010). High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis. Nanotechnology, 21(16), 165202. https://doi.org/10.1088/0957-4484/21/16/165202
Joung D, et al. High Yield Fabrication of Chemically Reduced Graphene Oxide Field Effect Transistors By Dielectrophoresis. Nanotechnology. 2010 Apr 23;21(16):165202. PubMed PMID: 20348593.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis. AU - Joung,Daeha, AU - Chunder,A, AU - Zhai,Lei, AU - Khondaker,Saiful I, Y1 - 2010/03/26/ PY - 2010/3/30/entrez PY - 2010/3/30/pubmed PY - 2010/7/1/medline SP - 165202 EP - 165202 JF - Nanotechnology JO - Nanotechnology VL - 21 IS - 16 N2 - We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets. The RGO sheets suspended in water were assembled between prefabricated gold source and drain electrodes using ac dielectrophoresis. With the application of a backgate voltage, 60% of the devices showed p-type FET behavior, while the remaining 40% showed ambipolar behavior. After mild thermal annealing at 200 degrees C, all ambipolar RGO FET remained ambipolar with increased hole and electron mobility, while 60% of the p-type RGO devices were transformed to ambipolar. The maximum hole and electron mobilities of the devices were 4.0 and 1.5 cm(2) V(- 1) s(- 1) respectively. High yield assembly of chemically derived RGO FET will have significant impact in scaled up fabrication of graphene based nanoelectronic devices. SN - 1361-6528 UR - https://www.unboundmedicine.com/medline/citation/20348593/High_yield_fabrication_of_chemically_reduced_graphene_oxide_field_effect_transistors_by_dielectrophoresis_ L2 - https://doi.org/10.1088/0957-4484/21/16/165202 DB - PRIME DP - Unbound Medicine ER -