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Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics.
. 2010 May 12; 10(5):1917-21.

Abstract

The integration ultrathin high dielectric constant (high-k) materials with graphene nanoribbons (GNRs) for top-gated transistors can push their performance limit for nanoscale electronics. Here we report the assembly of Si/HfO(2) core/shell nanowires on top of individual GNRs as the top-gates for GNR field-effect transistors with ultrathin high-k dielectrics. The Si/HfO(2) core/shell nanowires are synthesized by atomic layer deposition of the HfO(2) shell on highly doped silicon nanowires with a precise control of the dielectric thickness down to 1-2 nm. Using the core/shell nanowires as the top-gates, high-performance GNR transistors have been achieved with transconductance reaching 3.2 mS microm(-1), the highest value for GNR transistors reported to date. This method, for the first time, demonstrates the effective integration of ultrathin high-k dielectrics with graphene with precisely controlled thickness and quality, representing an important step toward high-performance graphene electronics.

Authors+Show Affiliations

Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90095, USA.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, U.S. Gov't, Non-P.H.S.

Language

eng

PubMed ID

20380441

Citation

Liao, Lei, et al. "Top-gated Graphene Nanoribbon Transistors With Ultrathin High-k Dielectrics." Nano Letters, vol. 10, no. 5, 2010, pp. 1917-21.
Liao L, Bai J, Cheng R, et al. Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics. Nano Lett. 2010;10(5):1917-21.
Liao, L., Bai, J., Cheng, R., Lin, Y. C., Jiang, S., Huang, Y., & Duan, X. (2010). Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics. Nano Letters, 10(5), 1917-21. https://doi.org/10.1021/nl100840z
Liao L, et al. Top-gated Graphene Nanoribbon Transistors With Ultrathin High-k Dielectrics. Nano Lett. 2010 May 12;10(5):1917-21. PubMed PMID: 20380441.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics. AU - Liao,Lei, AU - Bai,Jingwei, AU - Cheng,Rui, AU - Lin,Yung-Chen, AU - Jiang,Shan, AU - Huang,Yu, AU - Duan,Xiangfeng, PY - 2010/4/13/entrez PY - 2010/4/13/pubmed PY - 2010/9/14/medline SP - 1917 EP - 21 JF - Nano letters JO - Nano Lett. VL - 10 IS - 5 N2 - The integration ultrathin high dielectric constant (high-k) materials with graphene nanoribbons (GNRs) for top-gated transistors can push their performance limit for nanoscale electronics. Here we report the assembly of Si/HfO(2) core/shell nanowires on top of individual GNRs as the top-gates for GNR field-effect transistors with ultrathin high-k dielectrics. The Si/HfO(2) core/shell nanowires are synthesized by atomic layer deposition of the HfO(2) shell on highly doped silicon nanowires with a precise control of the dielectric thickness down to 1-2 nm. Using the core/shell nanowires as the top-gates, high-performance GNR transistors have been achieved with transconductance reaching 3.2 mS microm(-1), the highest value for GNR transistors reported to date. This method, for the first time, demonstrates the effective integration of ultrathin high-k dielectrics with graphene with precisely controlled thickness and quality, representing an important step toward high-performance graphene electronics. SN - 1530-6992 UR - https://www.unboundmedicine.com/medline/citation/20380441/Top_gated_graphene_nanoribbon_transistors_with_ultrathin_high_k_dielectrics_ L2 - https://doi.org/10.1021/nl100840z DB - PRIME DP - Unbound Medicine ER -