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Negative differential resistance in carbon nanotube field-effect transistors with patterned gate oxide.
ACS Nano. 2010 Jun 22; 4(6):3356-62.AN

Abstract

We demonstrate controllable and gate-tunable negative differential resistance in carbon nanotube field-effect transistors, at room temperature and at 4.2 K. This is achieved by effectively creating quantum dots along the carbon nanotube channel by patterning the underlying, high-kappa gate oxide. The negative differential resistance feature can be modulated by both the gate and the drain-source voltage, which leads to more than 20% change of the current peak-to-valley ratio. Our approach is fully scalable and opens up a possibility for a new class of nanoscale electronic devices using negative differential resistance in their operation.

Authors+Show Affiliations

Department of Physics, Nanoscience Center, P.O. Box 35, FI-40014 University of Jyvaskyla, Finland.No affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

20524681

Citation

Rinkiö, Marcus, et al. "Negative Differential Resistance in Carbon Nanotube Field-effect Transistors With Patterned Gate Oxide." ACS Nano, vol. 4, no. 6, 2010, pp. 3356-62.
Rinkiö M, Johansson A, Kotimäki V, et al. Negative differential resistance in carbon nanotube field-effect transistors with patterned gate oxide. ACS Nano. 2010;4(6):3356-62.
Rinkiö, M., Johansson, A., Kotimäki, V., & Törmä, P. (2010). Negative differential resistance in carbon nanotube field-effect transistors with patterned gate oxide. ACS Nano, 4(6), 3356-62. https://doi.org/10.1021/nn100208v
Rinkiö M, et al. Negative Differential Resistance in Carbon Nanotube Field-effect Transistors With Patterned Gate Oxide. ACS Nano. 2010 Jun 22;4(6):3356-62. PubMed PMID: 20524681.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Negative differential resistance in carbon nanotube field-effect transistors with patterned gate oxide. AU - Rinkiö,Marcus, AU - Johansson,Andreas, AU - Kotimäki,Ville, AU - Törmä,Päivi, PY - 2010/6/8/entrez PY - 2010/6/8/pubmed PY - 2010/10/12/medline SP - 3356 EP - 62 JF - ACS nano JO - ACS Nano VL - 4 IS - 6 N2 - We demonstrate controllable and gate-tunable negative differential resistance in carbon nanotube field-effect transistors, at room temperature and at 4.2 K. This is achieved by effectively creating quantum dots along the carbon nanotube channel by patterning the underlying, high-kappa gate oxide. The negative differential resistance feature can be modulated by both the gate and the drain-source voltage, which leads to more than 20% change of the current peak-to-valley ratio. Our approach is fully scalable and opens up a possibility for a new class of nanoscale electronic devices using negative differential resistance in their operation. SN - 1936-086X UR - https://www.unboundmedicine.com/medline/citation/20524681/Negative_differential_resistance_in_carbon_nanotube_field_effect_transistors_with_patterned_gate_oxide_ L2 - https://dx.doi.org/10.1021/nn100208v DB - PRIME DP - Unbound Medicine ER -