Tags

Type your tag names separated by a space and hit enter

Graphene oxide thin films for flexible nonvolatile memory applications.
. 2010 Nov 10; 10(11):4381-6.

Abstract

There has been strong demand for novel nonvolatile memory technology for low-cost, large-area, and low-power flexible electronics applications. Resistive memories based on metal oxide thin films have been extensively studied for application as next-generation nonvolatile memory devices. However, although the metal oxide based resistive memories have several advantages, such as good scalability, low-power consumption, and fast switching speed, their application to large-area flexible substrates has been limited due to their material characteristics and necessity of a high-temperature fabrication process. As a promising nonvolatile memory technology for large-area flexible applications, we present a graphene oxide based memory that can be easily fabricated using a room temperature spin-casting method on flexible substrates and has reliable memory performance in terms of retention and endurance. The microscopic origin of the bipolar resistive switching behavior was elucidated and is attributed to rupture and formation of conducting filaments at the top amorphous interface layer formed between the graphene oxide film and the top Al metal electrode, via high-resolution transmission electron microscopy and in situ X-ray photoemission spectroscopy. This work provides an important step for developing understanding of the fundamental physics of bipolar resistive switching in graphene oxide films, for the application to future flexible electronics.

Authors+Show Affiliations

Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Korea.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

20919689

Citation

Jeong, Hu Young, et al. "Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications." Nano Letters, vol. 10, no. 11, 2010, pp. 4381-6.
Jeong HY, Kim JY, Kim JW, et al. Graphene oxide thin films for flexible nonvolatile memory applications. Nano Lett. 2010;10(11):4381-6.
Jeong, H. Y., Kim, J. Y., Kim, J. W., Hwang, J. O., Kim, J. E., Lee, J. Y., Yoon, T. H., Cho, B. J., Kim, S. O., Ruoff, R. S., & Choi, S. Y. (2010). Graphene oxide thin films for flexible nonvolatile memory applications. Nano Letters, 10(11), 4381-6. https://doi.org/10.1021/nl101902k
Jeong HY, et al. Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications. Nano Lett. 2010 Nov 10;10(11):4381-6. PubMed PMID: 20919689.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Graphene oxide thin films for flexible nonvolatile memory applications. AU - Jeong,Hu Young, AU - Kim,Jong Yun, AU - Kim,Jeong Won, AU - Hwang,Jin Ok, AU - Kim,Ji-Eun, AU - Lee,Jeong Yong, AU - Yoon,Tae Hyun, AU - Cho,Byung Jin, AU - Kim,Sang Ouk, AU - Ruoff,Rodney S, AU - Choi,Sung-Yool, Y1 - 2010/10/04/ PY - 2010/10/6/entrez PY - 2010/10/6/pubmed PY - 2011/6/28/medline SP - 4381 EP - 6 JF - Nano letters JO - Nano Lett. VL - 10 IS - 11 N2 - There has been strong demand for novel nonvolatile memory technology for low-cost, large-area, and low-power flexible electronics applications. Resistive memories based on metal oxide thin films have been extensively studied for application as next-generation nonvolatile memory devices. However, although the metal oxide based resistive memories have several advantages, such as good scalability, low-power consumption, and fast switching speed, their application to large-area flexible substrates has been limited due to their material characteristics and necessity of a high-temperature fabrication process. As a promising nonvolatile memory technology for large-area flexible applications, we present a graphene oxide based memory that can be easily fabricated using a room temperature spin-casting method on flexible substrates and has reliable memory performance in terms of retention and endurance. The microscopic origin of the bipolar resistive switching behavior was elucidated and is attributed to rupture and formation of conducting filaments at the top amorphous interface layer formed between the graphene oxide film and the top Al metal electrode, via high-resolution transmission electron microscopy and in situ X-ray photoemission spectroscopy. This work provides an important step for developing understanding of the fundamental physics of bipolar resistive switching in graphene oxide films, for the application to future flexible electronics. SN - 1530-6992 UR - https://www.unboundmedicine.com/medline/citation/20919689/Graphene_oxide_thin_films_for_flexible_nonvolatile_memory_applications_ L2 - https://doi.org/10.1021/nl101902k DB - PRIME DP - Unbound Medicine ER -