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Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors.
Phys Chem Chem Phys. 2011 Feb 28; 13(8):3461-7.PC

Abstract

We designed acene molecules attached to two semi-infinite metallic electrodes to explore the source-drain current of graphene and the gate leakage current of the gate dielectric material in the field-effect transistors (FETs) device using the first-principles density functional theory combined with the non-equilibrium Green's function formalism. In the acene-based molecular junctions, we modify the connection position of the thiol group at one side, forming different electron transport routes. The electron transport routes besides the shortest one are defined as the cross channels. The simulation results indicate that electron transport through the cross channels is as efficient as that through the shortest one, since the conductance is weakly dependent on the distance. Thus, it is possible to connect the graphene with multiple leads, leading the graphene as a channel utilized in the graphene-based FETs in the mesoscopic system. When the conjugation of the cross channel is blocked, the junction conductance decreases dramatically. The differential conductance of the BA-1 is nearly 7 (54.57 μS) times as large as that of the BA-4 (7.35 μS) at zero bias. Therefore, the blocked graphene can be employed as the gate dielectric material in the top-gated graphene FET device, since the leakage current is small. The graphene-based field-effect transistors fabricated with a single layer of graphene as the channel and the blocked graphene as the gate dielectric material represent one way to overcome the problem of miniaturization which faces the new generation of transistors.

Authors+Show Affiliations

Key Laboratory of Analytical Chemistry for Life Science, Ministry of Education, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210008, PR China. zhaojw@nju.edu.cnNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article

Language

eng

PubMed ID

21240394

Citation

Yu, Cui, et al. "Theoretical Study of the Source-drain Current and Gate Leakage Current to Understand the Graphene Field-effect Transistors." Physical Chemistry Chemical Physics : PCCP, vol. 13, no. 8, 2011, pp. 3461-7.
Yu C, Liu H, Ni W, et al. Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors. Phys Chem Chem Phys. 2011;13(8):3461-7.
Yu, C., Liu, H., Ni, W., Gao, N., Zhao, J., & Zhang, H. (2011). Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors. Physical Chemistry Chemical Physics : PCCP, 13(8), 3461-7. https://doi.org/10.1039/c0cp01026j
Yu C, et al. Theoretical Study of the Source-drain Current and Gate Leakage Current to Understand the Graphene Field-effect Transistors. Phys Chem Chem Phys. 2011 Feb 28;13(8):3461-7. PubMed PMID: 21240394.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors. AU - Yu,Cui, AU - Liu,Hongmei, AU - Ni,Wenbin, AU - Gao,Nengyue, AU - Zhao,Jianwei, AU - Zhang,Haoli, Y1 - 2011/01/14/ PY - 2011/1/18/entrez PY - 2011/1/18/pubmed PY - 2011/1/18/medline SP - 3461 EP - 7 JF - Physical chemistry chemical physics : PCCP JO - Phys Chem Chem Phys VL - 13 IS - 8 N2 - We designed acene molecules attached to two semi-infinite metallic electrodes to explore the source-drain current of graphene and the gate leakage current of the gate dielectric material in the field-effect transistors (FETs) device using the first-principles density functional theory combined with the non-equilibrium Green's function formalism. In the acene-based molecular junctions, we modify the connection position of the thiol group at one side, forming different electron transport routes. The electron transport routes besides the shortest one are defined as the cross channels. The simulation results indicate that electron transport through the cross channels is as efficient as that through the shortest one, since the conductance is weakly dependent on the distance. Thus, it is possible to connect the graphene with multiple leads, leading the graphene as a channel utilized in the graphene-based FETs in the mesoscopic system. When the conjugation of the cross channel is blocked, the junction conductance decreases dramatically. The differential conductance of the BA-1 is nearly 7 (54.57 μS) times as large as that of the BA-4 (7.35 μS) at zero bias. Therefore, the blocked graphene can be employed as the gate dielectric material in the top-gated graphene FET device, since the leakage current is small. The graphene-based field-effect transistors fabricated with a single layer of graphene as the channel and the blocked graphene as the gate dielectric material represent one way to overcome the problem of miniaturization which faces the new generation of transistors. SN - 1463-9084 UR - https://www.unboundmedicine.com/medline/citation/21240394/Theoretical_study_of_the_source_drain_current_and_gate_leakage_current_to_understand_the_graphene_field_effect_transistors_ L2 - https://doi.org/10.1039/c0cp01026j DB - PRIME DP - Unbound Medicine ER -
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