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Quantum capacitance limited vertical scaling of graphene field-effect transistor.
ACS Nano. 2011 Mar 22; 5(3):2340-7.AN

Abstract

A high-quality Y2O3 dielectric layer has been grown directly on graphene and used to fabricated top-gate graphene field-effect transistors (FETs), and the thickness of the dielectric layer has been reduced continuously down to 3.9 nm with an equivalent oxide thickness (EOT) of 1.5 nm and excellent insulativity. By measuring CV characteristics of two graphene FETs with different gate oxide thicknesses, the oxide capacitance and quantum capacitance are retrieved directly from the experimental CV data without introducing any additional fitting process and parameters, yielding a relative dielectric constant of κ=10 for Y2O3 on graphene and an oxide capacitance of about 2.28 μF/cm2. It is found that for a rather large gate voltage range, this oxide capacitance is comparable and sometimes even larger than the quantum capacitance of graphene. Since the total gate capacitance is determined by the smaller of the oxide and quantum capacitance, our results show that not much further improvement can be gained via further vertical scaling down of the gate oxide, suggesting that Y2O3 may be the ultimate dielectric material for graphene. It is also shown that the Y2O3 gate dielectric layer with EOT of 1.5 nm may also satisfy the ultimate lateral scaling requirement on the gate length of graphene FET and be used effectively to control a graphene FET with a gate length as small as 1 nm.

Authors+Show Affiliations

Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

21323320

Citation

Xu, Huilong, et al. "Quantum Capacitance Limited Vertical Scaling of Graphene Field-effect Transistor." ACS Nano, vol. 5, no. 3, 2011, pp. 2340-7.
Xu H, Zhang Z, Wang Z, et al. Quantum capacitance limited vertical scaling of graphene field-effect transistor. ACS Nano. 2011;5(3):2340-7.
Xu, H., Zhang, Z., Wang, Z., Wang, S., Liang, X., & Peng, L. M. (2011). Quantum capacitance limited vertical scaling of graphene field-effect transistor. ACS Nano, 5(3), 2340-7. https://doi.org/10.1021/nn200026e
Xu H, et al. Quantum Capacitance Limited Vertical Scaling of Graphene Field-effect Transistor. ACS Nano. 2011 Mar 22;5(3):2340-7. PubMed PMID: 21323320.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Quantum capacitance limited vertical scaling of graphene field-effect transistor. AU - Xu,Huilong, AU - Zhang,Zhiyong, AU - Wang,Zhenxing, AU - Wang,Sheng, AU - Liang,Xuelei, AU - Peng,Lian-Mao, Y1 - 2011/02/16/ PY - 2011/2/18/entrez PY - 2011/2/18/pubmed PY - 2011/8/2/medline SP - 2340 EP - 7 JF - ACS nano JO - ACS Nano VL - 5 IS - 3 N2 - A high-quality Y2O3 dielectric layer has been grown directly on graphene and used to fabricated top-gate graphene field-effect transistors (FETs), and the thickness of the dielectric layer has been reduced continuously down to 3.9 nm with an equivalent oxide thickness (EOT) of 1.5 nm and excellent insulativity. By measuring CV characteristics of two graphene FETs with different gate oxide thicknesses, the oxide capacitance and quantum capacitance are retrieved directly from the experimental CV data without introducing any additional fitting process and parameters, yielding a relative dielectric constant of κ=10 for Y2O3 on graphene and an oxide capacitance of about 2.28 μF/cm2. It is found that for a rather large gate voltage range, this oxide capacitance is comparable and sometimes even larger than the quantum capacitance of graphene. Since the total gate capacitance is determined by the smaller of the oxide and quantum capacitance, our results show that not much further improvement can be gained via further vertical scaling down of the gate oxide, suggesting that Y2O3 may be the ultimate dielectric material for graphene. It is also shown that the Y2O3 gate dielectric layer with EOT of 1.5 nm may also satisfy the ultimate lateral scaling requirement on the gate length of graphene FET and be used effectively to control a graphene FET with a gate length as small as 1 nm. SN - 1936-086X UR - https://www.unboundmedicine.com/medline/citation/21323320/Quantum_capacitance_limited_vertical_scaling_of_graphene_field_effect_transistor_ L2 - https://doi.org/10.1021/nn200026e DB - PRIME DP - Unbound Medicine ER -