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Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires.
Nanotechnology 2011; 22(15):155606N

Abstract

Vertically aligned silicon nanowire (Si NW) arrays have been fabricated over large areas using an electroless etching (EE) method, which involves etching of silicon wafers in a silver nitrate and hydrofluoric acid based solution. A detailed parametric study determining the relationship between nanowire morphology and time, temperature, solution concentration and starting wafer characteristics (doping type, resistivity, crystallographic orientation) is presented. The as-fabricated Si NW arrays were analyzed by field emission scanning electron microscope (FE-SEM) and a linear dependency of nanowire length to both temperature and time was obtained and the change in the growth rate of Si NWs at increased etching durations was shown. Furthermore, the effects of EE parameters on the optical reflectivity of the Si NWs were investigated in this study. Reflectivity measurements show that the 42.8% reflectivity of the starting silicon wafer drops to 1.3%, recorded for 10 µm long Si NW arrays. The remarkable decrease in optical reflectivity indicates that Si NWs have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection.

Authors+Show Affiliations

Department of Metallurgical and Materials Engineering, Middle East Technical University, 06531 Ankara, Turkey.No affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

21389572

Citation

Ozdemir, Baris, et al. "Effect of Electroless Etching Parameters On the Growth and Reflection Properties of Silicon Nanowires." Nanotechnology, vol. 22, no. 15, 2011, p. 155606.
Ozdemir B, Kulakci M, Turan R, et al. Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires. Nanotechnology. 2011;22(15):155606.
Ozdemir, B., Kulakci, M., Turan, R., & Unalan, H. E. (2011). Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires. Nanotechnology, 22(15), p. 155606. doi:10.1088/0957-4484/22/15/155606.
Ozdemir B, et al. Effect of Electroless Etching Parameters On the Growth and Reflection Properties of Silicon Nanowires. Nanotechnology. 2011 Apr 15;22(15):155606. PubMed PMID: 21389572.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires. AU - Ozdemir,Baris, AU - Kulakci,Mustafa, AU - Turan,Rasit, AU - Unalan,Husnu Emrah, Y1 - 2011/03/10/ PY - 2011/3/11/entrez PY - 2011/3/11/pubmed PY - 2011/3/11/medline SP - 155606 EP - 155606 JF - Nanotechnology JO - Nanotechnology VL - 22 IS - 15 N2 - Vertically aligned silicon nanowire (Si NW) arrays have been fabricated over large areas using an electroless etching (EE) method, which involves etching of silicon wafers in a silver nitrate and hydrofluoric acid based solution. A detailed parametric study determining the relationship between nanowire morphology and time, temperature, solution concentration and starting wafer characteristics (doping type, resistivity, crystallographic orientation) is presented. The as-fabricated Si NW arrays were analyzed by field emission scanning electron microscope (FE-SEM) and a linear dependency of nanowire length to both temperature and time was obtained and the change in the growth rate of Si NWs at increased etching durations was shown. Furthermore, the effects of EE parameters on the optical reflectivity of the Si NWs were investigated in this study. Reflectivity measurements show that the 42.8% reflectivity of the starting silicon wafer drops to 1.3%, recorded for 10 µm long Si NW arrays. The remarkable decrease in optical reflectivity indicates that Si NWs have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection. SN - 1361-6528 UR - https://www.unboundmedicine.com/medline/citation/21389572/Effect_of_electroless_etching_parameters_on_the_growth_and_reflection_properties_of_silicon_nanowires_ L2 - https://doi.org/10.1088/0957-4484/22/15/155606 DB - PRIME DP - Unbound Medicine ER -