Tags

Type your tag names separated by a space and hit enter

Top-gated chemical vapor deposition grown graphene transistors with current saturation.
Nano Lett. 2011 Jun 08; 11(6):2555-9.NL

Abstract

Graphene transistors are of considerable interest for radio frequency (rf) applications. In general, transistors with large transconductance and drain current saturation are desirable for rf performance, which is however nontrivial to achieve in graphene transistors. Here we report high-performance top-gated graphene transistors based on chemical vapor deposition (CVD) grown graphene with large transconductance and drain current saturation. The graphene transistors were fabricated with evaporated high dielectric constant material (HfO(2)) as the top-gate dielectrics. Length scaling studies of the transistors with channel length from 5.6 μm to 100 nm show that complete current saturation can be achieved in 5.6 μm devices and the saturation characteristics degrade as the channel length shrinks down to the 100-300 nm regime. The drain current saturation was primarily attributed to drain bias induced shift of the Dirac points. With the selective deposition of HfO(2) gate dielectrics, we have further demonstrated a simple scheme to realize a 300 nm channel length graphene transistors with self-aligned source-drain electrodes to achieve the highest transconductance of 250 μS/μm reported in CVD graphene to date.

Authors+Show Affiliations

Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, N.I.H., Extramural
Research Support, U.S. Gov't, Non-P.H.S.

Language

eng

PubMed ID

21548551

Citation

Bai, Jingwei, et al. "Top-gated Chemical Vapor Deposition Grown Graphene Transistors With Current Saturation." Nano Letters, vol. 11, no. 6, 2011, pp. 2555-9.
Bai J, Liao L, Zhou H, et al. Top-gated chemical vapor deposition grown graphene transistors with current saturation. Nano Lett. 2011;11(6):2555-9.
Bai, J., Liao, L., Zhou, H., Cheng, R., Liu, L., Huang, Y., & Duan, X. (2011). Top-gated chemical vapor deposition grown graphene transistors with current saturation. Nano Letters, 11(6), 2555-9. https://doi.org/10.1021/nl201331x
Bai J, et al. Top-gated Chemical Vapor Deposition Grown Graphene Transistors With Current Saturation. Nano Lett. 2011 Jun 8;11(6):2555-9. PubMed PMID: 21548551.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Top-gated chemical vapor deposition grown graphene transistors with current saturation. AU - Bai,Jingwei, AU - Liao,Lei, AU - Zhou,Hailong, AU - Cheng,Rui, AU - Liu,Lixin, AU - Huang,Yu, AU - Duan,Xiangfeng, Y1 - 2011/05/06/ PY - 2011/5/10/entrez PY - 2011/5/10/pubmed PY - 2011/10/1/medline SP - 2555 EP - 9 JF - Nano letters JO - Nano Lett VL - 11 IS - 6 N2 - Graphene transistors are of considerable interest for radio frequency (rf) applications. In general, transistors with large transconductance and drain current saturation are desirable for rf performance, which is however nontrivial to achieve in graphene transistors. Here we report high-performance top-gated graphene transistors based on chemical vapor deposition (CVD) grown graphene with large transconductance and drain current saturation. The graphene transistors were fabricated with evaporated high dielectric constant material (HfO(2)) as the top-gate dielectrics. Length scaling studies of the transistors with channel length from 5.6 μm to 100 nm show that complete current saturation can be achieved in 5.6 μm devices and the saturation characteristics degrade as the channel length shrinks down to the 100-300 nm regime. The drain current saturation was primarily attributed to drain bias induced shift of the Dirac points. With the selective deposition of HfO(2) gate dielectrics, we have further demonstrated a simple scheme to realize a 300 nm channel length graphene transistors with self-aligned source-drain electrodes to achieve the highest transconductance of 250 μS/μm reported in CVD graphene to date. SN - 1530-6992 UR - https://www.unboundmedicine.com/medline/citation/21548551/Top_gated_chemical_vapor_deposition_grown_graphene_transistors_with_current_saturation_ L2 - https://doi.org/10.1021/nl201331x DB - PRIME DP - Unbound Medicine ER -