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Low-voltage organic field-effect transistors (OFETs) with solution-processed metal-oxide as gate dielectric.
ACS Appl Mater Interfaces. 2011 Dec; 3(12):4662-7.AA

Abstract

In this study, low-voltage copper phthalocyanine (CuPc)-based organic field-effect transistors (OFETs) are demonstrated utilizing solution-processed bilayer high-k metal-oxide (Al(2)O(y)/TiO(x)) as gate dielectric. The high-k metal-oxide bilayer is fabricated at low temperatures (< 200 °C) by a simple spin-coating technology and can be controlled as thin as 45 nm. The bilayer system exhibits a low leakage current density of less than 10(-5) A/cm(2) under bias voltage of 2 V, a very smooth surface with RMS of about 0.22 nm and an equivalent k value of 13.3. The obtained low-voltage CuPc based OFETs show high electric performance with high hole mobility of 0.06 cm(2)/(V s), threshold voltage of -0.5 V, on/off ration of 2 × 10(3) and a very small subthreshold slope of 160 mV/dec when operated at -1.5 V. Our study demonstrates a simple and robust approach that could be used to achieve low-voltage operation with solution-processed technique.

Authors+Show Affiliations

Department of Electronic Engineering and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong SAR, China.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

22007599

Citation

Su, Yaorong, et al. "Low-voltage Organic Field-effect Transistors (OFETs) With Solution-processed Metal-oxide as Gate Dielectric." ACS Applied Materials & Interfaces, vol. 3, no. 12, 2011, pp. 4662-7.
Su Y, Wang C, Xie W, et al. Low-voltage organic field-effect transistors (OFETs) with solution-processed metal-oxide as gate dielectric. ACS Appl Mater Interfaces. 2011;3(12):4662-7.
Su, Y., Wang, C., Xie, W., Xie, F., Chen, J., Zhao, N., & Xu, J. (2011). Low-voltage organic field-effect transistors (OFETs) with solution-processed metal-oxide as gate dielectric. ACS Applied Materials & Interfaces, 3(12), 4662-7. https://doi.org/10.1021/am201078v
Su Y, et al. Low-voltage Organic Field-effect Transistors (OFETs) With Solution-processed Metal-oxide as Gate Dielectric. ACS Appl Mater Interfaces. 2011;3(12):4662-7. PubMed PMID: 22007599.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Low-voltage organic field-effect transistors (OFETs) with solution-processed metal-oxide as gate dielectric. AU - Su,Yaorong, AU - Wang,Chengliang, AU - Xie,Weiguang, AU - Xie,Fangyan, AU - Chen,Jian, AU - Zhao,Ni, AU - Xu,Jianbin, Y1 - 2011/11/09/ PY - 2011/10/20/entrez PY - 2011/10/20/pubmed PY - 2011/10/20/medline SP - 4662 EP - 7 JF - ACS applied materials & interfaces JO - ACS Appl Mater Interfaces VL - 3 IS - 12 N2 - In this study, low-voltage copper phthalocyanine (CuPc)-based organic field-effect transistors (OFETs) are demonstrated utilizing solution-processed bilayer high-k metal-oxide (Al(2)O(y)/TiO(x)) as gate dielectric. The high-k metal-oxide bilayer is fabricated at low temperatures (< 200 °C) by a simple spin-coating technology and can be controlled as thin as 45 nm. The bilayer system exhibits a low leakage current density of less than 10(-5) A/cm(2) under bias voltage of 2 V, a very smooth surface with RMS of about 0.22 nm and an equivalent k value of 13.3. The obtained low-voltage CuPc based OFETs show high electric performance with high hole mobility of 0.06 cm(2)/(V s), threshold voltage of -0.5 V, on/off ration of 2 × 10(3) and a very small subthreshold slope of 160 mV/dec when operated at -1.5 V. Our study demonstrates a simple and robust approach that could be used to achieve low-voltage operation with solution-processed technique. SN - 1944-8252 UR - https://www.unboundmedicine.com/medline/citation/22007599/Low_voltage_organic_field_effect_transistors__OFETs__with_solution_processed_metal_oxide_as_gate_dielectric_ L2 - https://doi.org/10.1021/am201078v DB - PRIME DP - Unbound Medicine ER -
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