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Investigation on light emission in light-emitting diodes constructed with n-ZnO and p-Si nanowires.
J Nanosci Nanotechnol 2011; 11(7):6025-8JN

Abstract

The light emission was investigated in light-emitting diodes (LEDs) constructed with n-ZnO and p-Si nanowires (NWs). ZnO NWs were synthesized by thermal chemical vapor deposition and Si NWs were formed by crystallographic wet etching of a Si wafer. The LEDs were fabricated using the NWs via dielectrophoresis (DEP) and direct transfer methods. The DEP method enabled to align the ZnO NW at the position that led to p-n heterojunction diodes by crossing with the transferred Si NW. The I-V curve of the p-n heterojunction diode showed the well-defined current-rectifying characteristic, with a turn-on voltage of 3 V. The electroluminescence spectrum in the dark showed the strong emission at approximately 385 nm and the broad emission centered at approximately 510 nm, at a forward bias of 30 V. Under the illumination of 325-nm-wavelength light, the luminescence intensity at 385 nm was dramatically enhanced, compared to that in the dark, probably due to the electric-field-induced enhancement of luminescence.

Authors+Show Affiliations

Department of Electrical Engineering, Korea University, Seoul 136-713, Republic of Korea.No affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

22121651

Citation

Kim, Kwangeun, et al. "Investigation On Light Emission in Light-emitting Diodes Constructed With n-ZnO and p-Si Nanowires." Journal of Nanoscience and Nanotechnology, vol. 11, no. 7, 2011, pp. 6025-8.
Kim K, Moon T, Kim S. Investigation on light emission in light-emitting diodes constructed with n-ZnO and p-Si nanowires. J Nanosci Nanotechnol. 2011;11(7):6025-8.
Kim, K., Moon, T., & Kim, S. (2011). Investigation on light emission in light-emitting diodes constructed with n-ZnO and p-Si nanowires. Journal of Nanoscience and Nanotechnology, 11(7), pp. 6025-8.
Kim K, Moon T, Kim S. Investigation On Light Emission in Light-emitting Diodes Constructed With n-ZnO and p-Si Nanowires. J Nanosci Nanotechnol. 2011;11(7):6025-8. PubMed PMID: 22121651.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Investigation on light emission in light-emitting diodes constructed with n-ZnO and p-Si nanowires. AU - Kim,Kwangeun, AU - Moon,Taeho, AU - Kim,Sangsig, PY - 2011/11/30/entrez PY - 2011/11/30/pubmed PY - 2011/11/30/medline SP - 6025 EP - 8 JF - Journal of nanoscience and nanotechnology JO - J Nanosci Nanotechnol VL - 11 IS - 7 N2 - The light emission was investigated in light-emitting diodes (LEDs) constructed with n-ZnO and p-Si nanowires (NWs). ZnO NWs were synthesized by thermal chemical vapor deposition and Si NWs were formed by crystallographic wet etching of a Si wafer. The LEDs were fabricated using the NWs via dielectrophoresis (DEP) and direct transfer methods. The DEP method enabled to align the ZnO NW at the position that led to p-n heterojunction diodes by crossing with the transferred Si NW. The I-V curve of the p-n heterojunction diode showed the well-defined current-rectifying characteristic, with a turn-on voltage of 3 V. The electroluminescence spectrum in the dark showed the strong emission at approximately 385 nm and the broad emission centered at approximately 510 nm, at a forward bias of 30 V. Under the illumination of 325-nm-wavelength light, the luminescence intensity at 385 nm was dramatically enhanced, compared to that in the dark, probably due to the electric-field-induced enhancement of luminescence. SN - 1533-4880 UR - https://www.unboundmedicine.com/medline/citation/22121651/Investigation_on_light_emission_in_light_emitting_diodes_constructed_with_n_ZnO_and_p_Si_nanowires_ DB - PRIME DP - Unbound Medicine ER -
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