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Flexible gigahertz transistors derived from solution-based single-layer graphene.
. 2012 Mar 14; 12(3):1184-8.

Abstract

Flexible electronics mostly relies on organic semiconductors but the limited carrier velocity in polymers and molecular films prevents their use at frequencies above a few megahertz. Conversely, the high potential of graphene for high-frequency electronics on rigid substrates was recently demonstrated. We conducted the first study of solution-based graphene transistors at gigahertz frequencies, and we show that solution-based single-layer graphene ideally combines the required properties to achieve high speed flexible electronics on plastic substrates. Our graphene flexible transistors have current gain cutoff frequencies of 2.2 GHz and power gain cutoff frequencies of 550 MHz. Radio frequency measurements directly performed on bent samples show remarkable mechanical stability of these devices and demonstrate the advantages of solution-based graphene field-effect transistors over other types of flexible transistors based on organic materials.

Authors+Show Affiliations

CEA Saclay, IRAMIS, Service de Physique de l'Etat Condensé (URA 2464), Laboratoire d'Electronique Moléculaire, F-91191 Gif sur Yvette, France.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, U.S. Gov't, Non-P.H.S.

Language

eng

PubMed ID

22283460

Citation

Sire, Cédric, et al. "Flexible Gigahertz Transistors Derived From Solution-based Single-layer Graphene." Nano Letters, vol. 12, no. 3, 2012, pp. 1184-8.
Sire C, Ardiaca F, Lepilliet S, et al. Flexible gigahertz transistors derived from solution-based single-layer graphene. Nano Lett. 2012;12(3):1184-8.
Sire, C., Ardiaca, F., Lepilliet, S., Seo, J. W., Hersam, M. C., Dambrine, G., Happy, H., & Derycke, V. (2012). Flexible gigahertz transistors derived from solution-based single-layer graphene. Nano Letters, 12(3), 1184-8. https://doi.org/10.1021/nl203316r
Sire C, et al. Flexible Gigahertz Transistors Derived From Solution-based Single-layer Graphene. Nano Lett. 2012 Mar 14;12(3):1184-8. PubMed PMID: 22283460.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Flexible gigahertz transistors derived from solution-based single-layer graphene. AU - Sire,Cédric, AU - Ardiaca,Florence, AU - Lepilliet,Sylvie, AU - Seo,Jung-Woo T, AU - Hersam,Mark C, AU - Dambrine,Gilles, AU - Happy,Henri, AU - Derycke,Vincent, Y1 - 2012/02/02/ PY - 2012/1/31/entrez PY - 2012/1/31/pubmed PY - 2012/7/4/medline SP - 1184 EP - 8 JF - Nano letters JO - Nano Lett. VL - 12 IS - 3 N2 - Flexible electronics mostly relies on organic semiconductors but the limited carrier velocity in polymers and molecular films prevents their use at frequencies above a few megahertz. Conversely, the high potential of graphene for high-frequency electronics on rigid substrates was recently demonstrated. We conducted the first study of solution-based graphene transistors at gigahertz frequencies, and we show that solution-based single-layer graphene ideally combines the required properties to achieve high speed flexible electronics on plastic substrates. Our graphene flexible transistors have current gain cutoff frequencies of 2.2 GHz and power gain cutoff frequencies of 550 MHz. Radio frequency measurements directly performed on bent samples show remarkable mechanical stability of these devices and demonstrate the advantages of solution-based graphene field-effect transistors over other types of flexible transistors based on organic materials. SN - 1530-6992 UR - https://www.unboundmedicine.com/medline/citation/22283460/Flexible_gigahertz_transistors_derived_from_solution_based_single_layer_graphene_ L2 - https://doi.org/10.1021/nl203316r DB - PRIME DP - Unbound Medicine ER -