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Current saturation and voltage gain in bilayer graphene field effect transistors.
Nano Lett. 2012 Mar 14; 12(3):1324-8.NL

Abstract

The emergence of graphene with its unique electrical properties has triggered hopes in the electronic devices community regarding its exploitation as a channel material in field effect transistors. Graphene is especially promising for devices working at frequencies in the 100 GHz range. So far, graphene field effect transistors (GFETs) have shown cutoff frequencies up to 300 GHz, while exhibiting poor voltage gains, another important figure of merit for analog high frequency applications. In the present work, we show that the voltage gain of GFETs can be improved significantly by using bilayer graphene, where a band gap is introduced through a vertical electric displacement field. At a displacement field of -1.7 V/nm the bilayer GFETs exhibit an intrinsic voltage gain up to 35, a factor of 6 higher than the voltage gain in corresponding monolayer GFETs. The transconductance, which limits the cutoff frequency of a transistor, is not degraded by the displacement field and is similar in both monolayer and bilayer GFETs. Using numerical simulations based on an atomistic p(z) tight-binding Hamiltonian we demonstrate that this approach can be extended to sub-100 nm gate lengths.

Authors+Show Affiliations

Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, Otto-Blumenthal-Strasse 25, 52074 Aachen, Germany. szafranek@amo.deNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

22339809

Citation

Szafranek, B N., et al. "Current Saturation and Voltage Gain in Bilayer Graphene Field Effect Transistors." Nano Letters, vol. 12, no. 3, 2012, pp. 1324-8.
Szafranek BN, Fiori G, Schall D, et al. Current saturation and voltage gain in bilayer graphene field effect transistors. Nano Lett. 2012;12(3):1324-8.
Szafranek, B. N., Fiori, G., Schall, D., Neumaier, D., & Kurz, H. (2012). Current saturation and voltage gain in bilayer graphene field effect transistors. Nano Letters, 12(3), 1324-8. https://doi.org/10.1021/nl2038634
Szafranek BN, et al. Current Saturation and Voltage Gain in Bilayer Graphene Field Effect Transistors. Nano Lett. 2012 Mar 14;12(3):1324-8. PubMed PMID: 22339809.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Current saturation and voltage gain in bilayer graphene field effect transistors. AU - Szafranek,B N, AU - Fiori,G, AU - Schall,D, AU - Neumaier,D, AU - Kurz,H, Y1 - 2012/02/22/ PY - 2012/2/21/entrez PY - 2012/2/22/pubmed PY - 2012/7/4/medline SP - 1324 EP - 8 JF - Nano letters JO - Nano Lett VL - 12 IS - 3 N2 - The emergence of graphene with its unique electrical properties has triggered hopes in the electronic devices community regarding its exploitation as a channel material in field effect transistors. Graphene is especially promising for devices working at frequencies in the 100 GHz range. So far, graphene field effect transistors (GFETs) have shown cutoff frequencies up to 300 GHz, while exhibiting poor voltage gains, another important figure of merit for analog high frequency applications. In the present work, we show that the voltage gain of GFETs can be improved significantly by using bilayer graphene, where a band gap is introduced through a vertical electric displacement field. At a displacement field of -1.7 V/nm the bilayer GFETs exhibit an intrinsic voltage gain up to 35, a factor of 6 higher than the voltage gain in corresponding monolayer GFETs. The transconductance, which limits the cutoff frequency of a transistor, is not degraded by the displacement field and is similar in both monolayer and bilayer GFETs. Using numerical simulations based on an atomistic p(z) tight-binding Hamiltonian we demonstrate that this approach can be extended to sub-100 nm gate lengths. SN - 1530-6992 UR - https://www.unboundmedicine.com/medline/citation/22339809/Current_saturation_and_voltage_gain_in_bilayer_graphene_field_effect_transistors_ L2 - https://doi.org/10.1021/nl2038634 DB - PRIME DP - Unbound Medicine ER -