Tags

Type your tag names separated by a space and hit enter

Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone.
ACS Nano. 2012 Mar 27; 6(3):2722-30.AN

Abstract

Integration of graphene field-effect transistors (GFETs) requires the ability to grow or deposit high-quality, ultrathin dielectric insulators on graphene to modulate the channel potential. Here, we study a novel and facile approach based on atomic layer deposition through ozone functionalization to deposit high-κ dielectrics (such as Al(2)O(3)) without breaking vacuum. The underlying mechanisms of functionalization have been studied theoretically using ab initio calculations and experimentally using in situ monitoring of transport properties. It is found that ozone molecules are physisorbed on the surface of graphene, which act as nucleation sites for dielectric deposition. The physisorbed ozone molecules eventually react with the metal precursor, trimethylaluminum to form Al(2)O(3). Additionally, we successfully demonstrate the performance of dual-gated GFETs with Al(2)O(3) of sub-5 nm physical thickness as a gate dielectric. Back-gated GFETs with mobilities of ~19,000 cm(2)/(V·s) are also achieved after Al(2)O(3) deposition. These results indicate that ozone functionalization is a promising pathway to achieve scaled gate dielectrics on graphene without leaving a residual nucleation layer.

Authors+Show Affiliations

Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USA.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

22352388

Citation

Jandhyala, Srikar, et al. "Atomic Layer Deposition of Dielectrics On Graphene Using Reversibly Physisorbed Ozone." ACS Nano, vol. 6, no. 3, 2012, pp. 2722-30.
Jandhyala S, Mordi G, Lee B, et al. Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone. ACS Nano. 2012;6(3):2722-30.
Jandhyala, S., Mordi, G., Lee, B., Lee, G., Floresca, C., Cha, P. R., Ahn, J., Wallace, R. M., Chabal, Y. J., Kim, M. J., Colombo, L., Cho, K., & Kim, J. (2012). Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone. ACS Nano, 6(3), 2722-30. https://doi.org/10.1021/nn300167t
Jandhyala S, et al. Atomic Layer Deposition of Dielectrics On Graphene Using Reversibly Physisorbed Ozone. ACS Nano. 2012 Mar 27;6(3):2722-30. PubMed PMID: 22352388.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone. AU - Jandhyala,Srikar, AU - Mordi,Greg, AU - Lee,Bongki, AU - Lee,Geunsik, AU - Floresca,Carlo, AU - Cha,Pil-Ryung, AU - Ahn,Jinho, AU - Wallace,Robert M, AU - Chabal,Yves J, AU - Kim,Moon J, AU - Colombo,Luigi, AU - Cho,Kyeongjae, AU - Kim,Jiyoung, Y1 - 2012/03/06/ PY - 2012/2/23/entrez PY - 2012/2/23/pubmed PY - 2012/2/23/medline SP - 2722 EP - 30 JF - ACS nano JO - ACS Nano VL - 6 IS - 3 N2 - Integration of graphene field-effect transistors (GFETs) requires the ability to grow or deposit high-quality, ultrathin dielectric insulators on graphene to modulate the channel potential. Here, we study a novel and facile approach based on atomic layer deposition through ozone functionalization to deposit high-κ dielectrics (such as Al(2)O(3)) without breaking vacuum. The underlying mechanisms of functionalization have been studied theoretically using ab initio calculations and experimentally using in situ monitoring of transport properties. It is found that ozone molecules are physisorbed on the surface of graphene, which act as nucleation sites for dielectric deposition. The physisorbed ozone molecules eventually react with the metal precursor, trimethylaluminum to form Al(2)O(3). Additionally, we successfully demonstrate the performance of dual-gated GFETs with Al(2)O(3) of sub-5 nm physical thickness as a gate dielectric. Back-gated GFETs with mobilities of ~19,000 cm(2)/(V·s) are also achieved after Al(2)O(3) deposition. These results indicate that ozone functionalization is a promising pathway to achieve scaled gate dielectrics on graphene without leaving a residual nucleation layer. SN - 1936-086X UR - https://www.unboundmedicine.com/medline/citation/22352388/Atomic_layer_deposition_of_dielectrics_on_graphene_using_reversibly_physisorbed_ozone_ L2 - https://doi.org/10.1021/nn300167t DB - PRIME DP - Unbound Medicine ER -
Try the Free App:
Prime PubMed app for iOS iPhone iPad
Prime PubMed app for Android
Prime PubMed is provided
free to individuals by:
Unbound Medicine.