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Graphene-graphite oxide field-effect transistors.
Nano Lett. 2012 Mar 14; 12(3):1165-9.NL

Abstract

Graphene's high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO(2) or HfO(2). In contrast, we have studied the use of an ultrathin layered material, graphene's insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO(2), typically ~1-3 × 10(8) V/m, while its dielectric constant is slightly higher, κ ≈ 4.3.

Authors+Show Affiliations

Department of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA.No affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, U.S. Gov't, Non-P.H.S.

Language

eng

PubMed ID

22380722

Citation

Standley, Brian, et al. "Graphene-graphite Oxide Field-effect Transistors." Nano Letters, vol. 12, no. 3, 2012, pp. 1165-9.
Standley B, Mendez A, Schmidgall E, et al. Graphene-graphite oxide field-effect transistors. Nano Lett. 2012;12(3):1165-9.
Standley, B., Mendez, A., Schmidgall, E., & Bockrath, M. (2012). Graphene-graphite oxide field-effect transistors. Nano Letters, 12(3), 1165-9. https://doi.org/10.1021/nl2028415
Standley B, et al. Graphene-graphite Oxide Field-effect Transistors. Nano Lett. 2012 Mar 14;12(3):1165-9. PubMed PMID: 22380722.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Graphene-graphite oxide field-effect transistors. AU - Standley,Brian, AU - Mendez,Anthony, AU - Schmidgall,Emma, AU - Bockrath,Marc, Y1 - 2012/03/01/ PY - 2012/3/3/entrez PY - 2012/3/3/pubmed PY - 2012/7/4/medline SP - 1165 EP - 9 JF - Nano letters JO - Nano Lett VL - 12 IS - 3 N2 - Graphene's high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO(2) or HfO(2). In contrast, we have studied the use of an ultrathin layered material, graphene's insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO(2), typically ~1-3 × 10(8) V/m, while its dielectric constant is slightly higher, κ ≈ 4.3. SN - 1530-6992 UR - https://www.unboundmedicine.com/medline/citation/22380722/Graphene_graphite_oxide_field_effect_transistors_ L2 - https://doi.org/10.1021/nl2028415 DB - PRIME DP - Unbound Medicine ER -