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Observation of conducting filament growth in nanoscale resistive memories.
Nat Commun 2012; 3:732NC

Abstract

Nanoscale resistive switching devices, sometimes termed memristors, have recently generated significant interest for memory, logic and neuromorphic applications. Resistive switching effects in dielectric-based devices are normally assumed to be caused by conducting filament formation across the electrodes, but the nature of the filaments and their growth dynamics remain controversial. Here we report direct transmission electron microscopy imaging, and structural and compositional analysis of the nanoscale conducting filaments. Through systematic ex-situ and in-situ transmission electron microscopy studies on devices under different programming conditions, we found that the filament growth can be dominated by cation transport in the dielectric film. Unexpectedly, two different growth modes were observed for the first time in materials with different microstructures. Regardless of the growth direction, the narrowest region of the filament was found to be near the dielectric/inert-electrode interface in these devices, suggesting that this region deserves particular attention for continued device optimization.

Authors+Show Affiliations

Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109, USA.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article

Language

eng

PubMed ID

22415823

Citation

Yang, Yuchao, et al. "Observation of Conducting Filament Growth in Nanoscale Resistive Memories." Nature Communications, vol. 3, 2012, p. 732.
Yang Y, Gao P, Gaba S, et al. Observation of conducting filament growth in nanoscale resistive memories. Nat Commun. 2012;3:732.
Yang, Y., Gao, P., Gaba, S., Chang, T., Pan, X., & Lu, W. (2012). Observation of conducting filament growth in nanoscale resistive memories. Nature Communications, 3, p. 732. doi:10.1038/ncomms1737.
Yang Y, et al. Observation of Conducting Filament Growth in Nanoscale Resistive Memories. Nat Commun. 2012 Mar 13;3:732. PubMed PMID: 22415823.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Observation of conducting filament growth in nanoscale resistive memories. AU - Yang,Yuchao, AU - Gao,Peng, AU - Gaba,Siddharth, AU - Chang,Ting, AU - Pan,Xiaoqing, AU - Lu,Wei, Y1 - 2012/03/13/ PY - 2011/08/10/received PY - 2012/02/08/accepted PY - 2012/3/15/entrez PY - 2012/3/15/pubmed PY - 2012/3/15/medline SP - 732 EP - 732 JF - Nature communications JO - Nat Commun VL - 3 N2 - Nanoscale resistive switching devices, sometimes termed memristors, have recently generated significant interest for memory, logic and neuromorphic applications. Resistive switching effects in dielectric-based devices are normally assumed to be caused by conducting filament formation across the electrodes, but the nature of the filaments and their growth dynamics remain controversial. Here we report direct transmission electron microscopy imaging, and structural and compositional analysis of the nanoscale conducting filaments. Through systematic ex-situ and in-situ transmission electron microscopy studies on devices under different programming conditions, we found that the filament growth can be dominated by cation transport in the dielectric film. Unexpectedly, two different growth modes were observed for the first time in materials with different microstructures. Regardless of the growth direction, the narrowest region of the filament was found to be near the dielectric/inert-electrode interface in these devices, suggesting that this region deserves particular attention for continued device optimization. SN - 2041-1723 UR - https://www.unboundmedicine.com/medline/citation/22415823/Observation_of_conducting_filament_growth_in_nanoscale_resistive_memories_ L2 - http://dx.doi.org/10.1038/ncomms1737 DB - PRIME DP - Unbound Medicine ER -