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High mobility flexible graphene field-effect transistors with self-healing gate dielectrics.
ACS Nano. 2012 May 22; 6(5):4469-74.AN

Abstract

A high-mobility low-voltage graphene field-effect transistor (FET) array was fabricated on a flexible plastic substrate using high-capacitance natural aluminum oxide as a gate dielectric in a self-aligned device configuration. The high capacitance of the native aluminum oxide and the self-alignment, which minimizes access resistance, yield a high current on/off ratio and an operation voltage below 3 V, along with high electron and hole mobility of 230 and 300 cm(2)/V·s, respectively. Moreover, the native aluminum oxide is resistant to mechanical bending and exhibits self-healing upon electrical breakdown. These results indicate that self-aligned graphene FETs can provide remarkably improved device performance and stability for a range of applications in flexible electronics.

Authors+Show Affiliations

Department of Electrical Engineering, Materials Science and Microsystems, National Tsing Hua University, Hsinchu 30013, Taiwan.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article

Language

eng

PubMed ID

22501029

Citation

Lu, Chun-Chieh, et al. "High Mobility Flexible Graphene Field-effect Transistors With Self-healing Gate Dielectrics." ACS Nano, vol. 6, no. 5, 2012, pp. 4469-74.
Lu CC, Lin YC, Yeh CH, et al. High mobility flexible graphene field-effect transistors with self-healing gate dielectrics. ACS Nano. 2012;6(5):4469-74.
Lu, C. C., Lin, Y. C., Yeh, C. H., Huang, J. C., & Chiu, P. W. (2012). High mobility flexible graphene field-effect transistors with self-healing gate dielectrics. ACS Nano, 6(5), 4469-74. https://doi.org/10.1021/nn301199j
Lu CC, et al. High Mobility Flexible Graphene Field-effect Transistors With Self-healing Gate Dielectrics. ACS Nano. 2012 May 22;6(5):4469-74. PubMed PMID: 22501029.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - High mobility flexible graphene field-effect transistors with self-healing gate dielectrics. AU - Lu,Chun-Chieh, AU - Lin,Yung-Chang, AU - Yeh,Chao-Hui, AU - Huang,Ju-Chun, AU - Chiu,Po-Wen, Y1 - 2012/04/18/ PY - 2012/4/17/entrez PY - 2012/4/17/pubmed PY - 2012/4/17/medline SP - 4469 EP - 74 JF - ACS nano JO - ACS Nano VL - 6 IS - 5 N2 - A high-mobility low-voltage graphene field-effect transistor (FET) array was fabricated on a flexible plastic substrate using high-capacitance natural aluminum oxide as a gate dielectric in a self-aligned device configuration. The high capacitance of the native aluminum oxide and the self-alignment, which minimizes access resistance, yield a high current on/off ratio and an operation voltage below 3 V, along with high electron and hole mobility of 230 and 300 cm(2)/V·s, respectively. Moreover, the native aluminum oxide is resistant to mechanical bending and exhibits self-healing upon electrical breakdown. These results indicate that self-aligned graphene FETs can provide remarkably improved device performance and stability for a range of applications in flexible electronics. SN - 1936-086X UR - https://www.unboundmedicine.com/medline/citation/22501029/High_mobility_flexible_graphene_field_effect_transistors_with_self_healing_gate_dielectrics_ L2 - https://doi.org/10.1021/nn301199j DB - PRIME DP - Unbound Medicine ER -
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