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State-of-the-art graphene high-frequency electronics.
. 2012 Jun 13; 12(6):3062-7.

Abstract

High-performance graphene transistors for radio frequency applications have received much attention and significant progress has been achieved. However, devices based on large-area synthetic graphene, which have direct technological relevance, are still typically outperformed by those based on mechanically exfoliated graphene. Here, we report devices with intrinsic cutoff frequency above 300 GHz, based on both wafer-scale CVD grown graphene and epitaxial graphene on SiC, thus surpassing previous records on any graphene material. We also demonstrate devices with optimized architecture exhibiting voltage and power gains reaching 20 dB and a wafer-scale integrated graphene amplifier circuit with voltage amplification.

Authors+Show Affiliations

IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, United States. ywu@us.ibm.comNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, U.S. Gov't, Non-P.H.S.

Language

eng

PubMed ID

22563820

Citation

Wu, Yanqing, et al. "State-of-the-art Graphene High-frequency Electronics." Nano Letters, vol. 12, no. 6, 2012, pp. 3062-7.
Wu Y, Jenkins KA, Valdes-Garcia A, et al. State-of-the-art graphene high-frequency electronics. Nano Lett. 2012;12(6):3062-7.
Wu, Y., Jenkins, K. A., Valdes-Garcia, A., Farmer, D. B., Zhu, Y., Bol, A. A., Dimitrakopoulos, C., Zhu, W., Xia, F., Avouris, P., & Lin, Y. M. (2012). State-of-the-art graphene high-frequency electronics. Nano Letters, 12(6), 3062-7. https://doi.org/10.1021/nl300904k
Wu Y, et al. State-of-the-art Graphene High-frequency Electronics. Nano Lett. 2012 Jun 13;12(6):3062-7. PubMed PMID: 22563820.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - State-of-the-art graphene high-frequency electronics. AU - Wu,Yanqing, AU - Jenkins,Keith A, AU - Valdes-Garcia,Alberto, AU - Farmer,Damon B, AU - Zhu,Yu, AU - Bol,Ageeth A, AU - Dimitrakopoulos,Christos, AU - Zhu,Wenjuan, AU - Xia,Fengnian, AU - Avouris,Phaedon, AU - Lin,Yu-Ming, Y1 - 2012/05/14/ PY - 2012/5/9/entrez PY - 2012/5/9/pubmed PY - 2012/10/16/medline SP - 3062 EP - 7 JF - Nano letters JO - Nano Lett. VL - 12 IS - 6 N2 - High-performance graphene transistors for radio frequency applications have received much attention and significant progress has been achieved. However, devices based on large-area synthetic graphene, which have direct technological relevance, are still typically outperformed by those based on mechanically exfoliated graphene. Here, we report devices with intrinsic cutoff frequency above 300 GHz, based on both wafer-scale CVD grown graphene and epitaxial graphene on SiC, thus surpassing previous records on any graphene material. We also demonstrate devices with optimized architecture exhibiting voltage and power gains reaching 20 dB and a wafer-scale integrated graphene amplifier circuit with voltage amplification. SN - 1530-6992 UR - https://www.unboundmedicine.com/medline/citation/22563820/State_of_the_art_graphene_high_frequency_electronics_ L2 - https://doi.org/10.1021/nl300904k DB - PRIME DP - Unbound Medicine ER -