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Current saturation in submicrometer graphene transistors with thin gate dielectric: experiment, simulation, and theory.
ACS Nano. 2012 Jun 26; 6(6):5220-6.AN

Abstract

Recently, graphene field-effect transistors (FET) with cutoff frequencies (f(T)) between 100 and 300 GHz have been reported; however, the devices showed very weak drain current saturation, leading to an undesirably high output conductance (g(ds)= dI(ds)/dV(ds)). A crucial figure-of-merit for analog/RF transistors is the intrinsic voltage gain (g(m)/g(ds)) which requires both high g(m) (primary component of f(T)) and low g(ds). Obtaining current saturation has become one of the key challenges in graphene device design. In this work, we study theoretically the influence of the dielectric thickness on the output characteristics of graphene FETs by using a surface-potential-based device model. We also experimentally demonstrate that by employing a very thin gate dielectric (equivalent oxide thickness less than 2 nm), full drain current saturation can be obtained for large-scale chemical vapor deposition graphene FETs with short channels. In addition to showing intrinsic voltage gain (as high as 34) that is comparable to commercial semiconductor FETs with bandgaps, we also demonstrate high frequency AC voltage gain and S21 power gain from s-parameter measurements.

Authors+Show Affiliations

IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA. sjhan@us.ibm.comNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, U.S. Gov't, Non-P.H.S.

Language

eng

PubMed ID

22582702

Citation

Han, Shu-Jen, et al. "Current Saturation in Submicrometer Graphene Transistors With Thin Gate Dielectric: Experiment, Simulation, and Theory." ACS Nano, vol. 6, no. 6, 2012, pp. 5220-6.
Han SJ, Reddy D, Carpenter GD, et al. Current saturation in submicrometer graphene transistors with thin gate dielectric: experiment, simulation, and theory. ACS Nano. 2012;6(6):5220-6.
Han, S. J., Reddy, D., Carpenter, G. D., Franklin, A. D., & Jenkins, K. A. (2012). Current saturation in submicrometer graphene transistors with thin gate dielectric: experiment, simulation, and theory. ACS Nano, 6(6), 5220-6. https://doi.org/10.1021/nn300978c
Han SJ, et al. Current Saturation in Submicrometer Graphene Transistors With Thin Gate Dielectric: Experiment, Simulation, and Theory. ACS Nano. 2012 Jun 26;6(6):5220-6. PubMed PMID: 22582702.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Current saturation in submicrometer graphene transistors with thin gate dielectric: experiment, simulation, and theory. AU - Han,Shu-Jen, AU - Reddy,Dharmendar, AU - Carpenter,Gary D, AU - Franklin,Aaron D, AU - Jenkins,Keith A, Y1 - 2012/05/21/ PY - 2012/5/16/entrez PY - 2012/5/16/pubmed PY - 2012/11/8/medline SP - 5220 EP - 6 JF - ACS nano JO - ACS Nano VL - 6 IS - 6 N2 - Recently, graphene field-effect transistors (FET) with cutoff frequencies (f(T)) between 100 and 300 GHz have been reported; however, the devices showed very weak drain current saturation, leading to an undesirably high output conductance (g(ds)= dI(ds)/dV(ds)). A crucial figure-of-merit for analog/RF transistors is the intrinsic voltage gain (g(m)/g(ds)) which requires both high g(m) (primary component of f(T)) and low g(ds). Obtaining current saturation has become one of the key challenges in graphene device design. In this work, we study theoretically the influence of the dielectric thickness on the output characteristics of graphene FETs by using a surface-potential-based device model. We also experimentally demonstrate that by employing a very thin gate dielectric (equivalent oxide thickness less than 2 nm), full drain current saturation can be obtained for large-scale chemical vapor deposition graphene FETs with short channels. In addition to showing intrinsic voltage gain (as high as 34) that is comparable to commercial semiconductor FETs with bandgaps, we also demonstrate high frequency AC voltage gain and S21 power gain from s-parameter measurements. SN - 1936-086X UR - https://www.unboundmedicine.com/medline/citation/22582702/Current_saturation_in_submicrometer_graphene_transistors_with_thin_gate_dielectric:_experiment_simulation_and_theory_ L2 - https://doi.org/10.1021/nn300978c DB - PRIME DP - Unbound Medicine ER -