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An advanced fabrication method of highly ordered ZnO nanowire arrays on silicon substrates by atomic layer deposition.
Nanotechnology 2012; 23(23):235607N

Abstract

In this work, the controlled fabrication of highly ordered ZnO nanowire (NW) arrays on silicon substrates is reported. Si NWs fabricated by a combination of phase shift lithography and etching are used as a template and are subsequently substituted by ZnO NWs with a dry-etching technique and atomic layer deposition. This fabrication technique allows the vertical ZnO NWs to be fabricated on 4 in Si wafers. Room temperature photoluminescence and micro-photoluminescence are used to observe the optical properties of the atomic layer deposition (ALD) based ZnO NWs. The sharp UV luminescence observed from the ALD ZnO NWs is unexpected for the polycrystalline nanostructure. Surprisingly, the defect related luminescence is much decreased compared to an ALD ZnO film deposited at the same time ona plane substrate. Electrical characterization was carried out by using nanomanipulators. With the p-type Si substrate and the n-type ZnO NWs the nanodevices represent p–n NW diodes.The nanowire diodes show a very high breakthrough potential which implies that the ALD ZnO NWs can be used for future electronic applications.

Authors+Show Affiliations

Institute of Microsystems Engineering, University of Freiburg, Georges Koehler Allee 103, Freiburg, Germany. kittitat.subannajui@imtek.uni-freiburg.deNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article

Language

eng

PubMed ID

22609898

Citation

Subannajui, Kittitat, et al. "An Advanced Fabrication Method of Highly Ordered ZnO Nanowire Arrays On Silicon Substrates By Atomic Layer Deposition." Nanotechnology, vol. 23, no. 23, 2012, p. 235607.
Subannajui K, Güder F, Danhof J, et al. An advanced fabrication method of highly ordered ZnO nanowire arrays on silicon substrates by atomic layer deposition. Nanotechnology. 2012;23(23):235607.
Subannajui, K., Güder, F., Danhof, J., Menzel, A., Yang, Y., Kirste, L., ... Zacharias, M. (2012). An advanced fabrication method of highly ordered ZnO nanowire arrays on silicon substrates by atomic layer deposition. Nanotechnology, 23(23), p. 235607. doi:10.1088/0957-4484/23/23/235607.
Subannajui K, et al. An Advanced Fabrication Method of Highly Ordered ZnO Nanowire Arrays On Silicon Substrates By Atomic Layer Deposition. Nanotechnology. 2012 Jun 15;23(23):235607. PubMed PMID: 22609898.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - An advanced fabrication method of highly ordered ZnO nanowire arrays on silicon substrates by atomic layer deposition. AU - Subannajui,Kittitat, AU - Güder,Firat, AU - Danhof,Julia, AU - Menzel,Andreas, AU - Yang,Yang, AU - Kirste,Lutz, AU - Wang,Chunyu, AU - Cimalla,Volker, AU - Schwarz,Ulrich, AU - Zacharias,Margit, PY - 2012/5/22/entrez PY - 2012/5/23/pubmed PY - 2012/9/28/medline SP - 235607 EP - 235607 JF - Nanotechnology JO - Nanotechnology VL - 23 IS - 23 N2 - In this work, the controlled fabrication of highly ordered ZnO nanowire (NW) arrays on silicon substrates is reported. Si NWs fabricated by a combination of phase shift lithography and etching are used as a template and are subsequently substituted by ZnO NWs with a dry-etching technique and atomic layer deposition. This fabrication technique allows the vertical ZnO NWs to be fabricated on 4 in Si wafers. Room temperature photoluminescence and micro-photoluminescence are used to observe the optical properties of the atomic layer deposition (ALD) based ZnO NWs. The sharp UV luminescence observed from the ALD ZnO NWs is unexpected for the polycrystalline nanostructure. Surprisingly, the defect related luminescence is much decreased compared to an ALD ZnO film deposited at the same time ona plane substrate. Electrical characterization was carried out by using nanomanipulators. With the p-type Si substrate and the n-type ZnO NWs the nanodevices represent p–n NW diodes.The nanowire diodes show a very high breakthrough potential which implies that the ALD ZnO NWs can be used for future electronic applications. SN - 1361-6528 UR - https://www.unboundmedicine.com/medline/citation/22609898/An_advanced_fabrication_method_of_highly_ordered_ZnO_nanowire_arrays_on_silicon_substrates_by_atomic_layer_deposition_ L2 - https://doi.org/10.1088/0957-4484/23/23/235607 DB - PRIME DP - Unbound Medicine ER -