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Self-aligned T-gate high-purity semiconducting carbon nanotube RF transistors operated in quasi-ballistic transport and quantum capacitance regime.
ACS Nano. 2012 Aug 28; 6(8):6936-43.AN

Abstract

Carbon nanotube RF transistors are predicted to offer good performance and high linearity when operated in the ballistic transport and quantum capacitance regime; however, realization of such transistors has been very challenging. In this paper, we introduce a self-aligned fabrication method for carbon nanotube RF transistors, which incorporate a T-shaped (mushroom-shaped) aluminum gate, with oxidized aluminum as the gate dielectric. In this way, the channel length can be scaled down to 140 nm, which enables quasi-ballistic transport, and the gate dielectric is reduced to 2-3 nm aluminum oxide, leading to quasi-quantum capacitance operation. A current-gain cutoff frequency (f(t)) up to 23 GHz and a maximum oscillation frequency (f(max)) of 10 GHz are demonstrated. Furthermore, the linearity properties of nanotube transistors are characterized by using the 1 dB compression point measurement with positive power gain for the first time, to our knowledge. Our work reveals the importance and potential of separated semiconducting nanotubes for various RF applications.

Authors+Show Affiliations

Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, USA.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

22768974

Citation

Che, Yuchi, et al. "Self-aligned T-gate High-purity Semiconducting Carbon Nanotube RF Transistors Operated in Quasi-ballistic Transport and Quantum Capacitance Regime." ACS Nano, vol. 6, no. 8, 2012, pp. 6936-43.
Che Y, Badmaev A, Jooyaie A, et al. Self-aligned T-gate high-purity semiconducting carbon nanotube RF transistors operated in quasi-ballistic transport and quantum capacitance regime. ACS Nano. 2012;6(8):6936-43.
Che, Y., Badmaev, A., Jooyaie, A., Wu, T., Zhang, J., Wang, C., Galatsis, K., Enaya, H. A., & Zhou, C. (2012). Self-aligned T-gate high-purity semiconducting carbon nanotube RF transistors operated in quasi-ballistic transport and quantum capacitance regime. ACS Nano, 6(8), 6936-43. https://doi.org/10.1021/nn301972j
Che Y, et al. Self-aligned T-gate High-purity Semiconducting Carbon Nanotube RF Transistors Operated in Quasi-ballistic Transport and Quantum Capacitance Regime. ACS Nano. 2012 Aug 28;6(8):6936-43. PubMed PMID: 22768974.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Self-aligned T-gate high-purity semiconducting carbon nanotube RF transistors operated in quasi-ballistic transport and quantum capacitance regime. AU - Che,Yuchi, AU - Badmaev,Alexander, AU - Jooyaie,Alborz, AU - Wu,Tao, AU - Zhang,Jialu, AU - Wang,Chuan, AU - Galatsis,Kosmas, AU - Enaya,Hani A, AU - Zhou,Chongwu, Y1 - 2012/07/13/ PY - 2012/7/10/entrez PY - 2012/7/10/pubmed PY - 2013/1/4/medline SP - 6936 EP - 43 JF - ACS nano JO - ACS Nano VL - 6 IS - 8 N2 - Carbon nanotube RF transistors are predicted to offer good performance and high linearity when operated in the ballistic transport and quantum capacitance regime; however, realization of such transistors has been very challenging. In this paper, we introduce a self-aligned fabrication method for carbon nanotube RF transistors, which incorporate a T-shaped (mushroom-shaped) aluminum gate, with oxidized aluminum as the gate dielectric. In this way, the channel length can be scaled down to 140 nm, which enables quasi-ballistic transport, and the gate dielectric is reduced to 2-3 nm aluminum oxide, leading to quasi-quantum capacitance operation. A current-gain cutoff frequency (f(t)) up to 23 GHz and a maximum oscillation frequency (f(max)) of 10 GHz are demonstrated. Furthermore, the linearity properties of nanotube transistors are characterized by using the 1 dB compression point measurement with positive power gain for the first time, to our knowledge. Our work reveals the importance and potential of separated semiconducting nanotubes for various RF applications. SN - 1936-086X UR - https://www.unboundmedicine.com/medline/citation/22768974/Self_aligned_T_gate_high_purity_semiconducting_carbon_nanotube_RF_transistors_operated_in_quasi_ballistic_transport_and_quantum_capacitance_regime_ L2 - https://doi.org/10.1021/nn301972j DB - PRIME DP - Unbound Medicine ER -