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Atomistic boron-doped graphene field-effect transistors: a route toward unipolar characteristics.
ACS Nano. 2012 Sep 25; 6(9):7942-7.AN

Abstract

We report fully quantum simulations of realistic models of boron-doped graphene-based field-effect transistors, including atomistic details based on DFT calculations. We show that the self-consistent solution of the three-dimensional (3D) Poisson and Schrödinger equations with a representation in terms of a tight-binding Hamiltonian manages to accurately reproduce the DFT results for an isolated boron-doped graphene nanoribbon. Using a 3D Poisson/Schrödinger solver within the non-equilibrium Green's function (NEGF) formalism, self-consistent calculations of the gate-screened scattering potentials induced by the boron impurities have been performed, allowing the theoretical exploration of the tunability of transistor characteristics. The boron-doped graphene transistors are found to approach unipolar behavior as the boron concentration is increased and, by tuning the density of chemical dopants, the electron-hole transport asymmetry can be finely adjusted. Correspondingly, the onset of a mobility gap in the device is observed. Although the computed asymmetries are not sufficient to warrant proper device operation, our results represent an initial step in the direction of improved transfer characteristics and, in particular, the developed simulation strategy is a powerful new tool for modeling doped graphene nanostructures.

Authors+Show Affiliations

Dipartimento di Ingegneria dell'Informazione, Università di Pisa, Via Caruso 16, 56122 Pisa, Italy.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

22876866

Citation

Marconcini, Paolo, et al. "Atomistic Boron-doped Graphene Field-effect Transistors: a Route Toward Unipolar Characteristics." ACS Nano, vol. 6, no. 9, 2012, pp. 7942-7.
Marconcini P, Cresti A, Triozon F, et al. Atomistic boron-doped graphene field-effect transistors: a route toward unipolar characteristics. ACS Nano. 2012;6(9):7942-7.
Marconcini, P., Cresti, A., Triozon, F., Fiori, G., Biel, B., Niquet, Y. M., Macucci, M., & Roche, S. (2012). Atomistic boron-doped graphene field-effect transistors: a route toward unipolar characteristics. ACS Nano, 6(9), 7942-7.
Marconcini P, et al. Atomistic Boron-doped Graphene Field-effect Transistors: a Route Toward Unipolar Characteristics. ACS Nano. 2012 Sep 25;6(9):7942-7. PubMed PMID: 22876866.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Atomistic boron-doped graphene field-effect transistors: a route toward unipolar characteristics. AU - Marconcini,Paolo, AU - Cresti,Alessandro, AU - Triozon,François, AU - Fiori,Gianluca, AU - Biel,Blanca, AU - Niquet,Yann-Michel, AU - Macucci,Massimo, AU - Roche,Stephan, Y1 - 2012/08/21/ PY - 2012/8/11/entrez PY - 2012/8/11/pubmed PY - 2013/2/9/medline SP - 7942 EP - 7 JF - ACS nano JO - ACS Nano VL - 6 IS - 9 N2 - We report fully quantum simulations of realistic models of boron-doped graphene-based field-effect transistors, including atomistic details based on DFT calculations. We show that the self-consistent solution of the three-dimensional (3D) Poisson and Schrödinger equations with a representation in terms of a tight-binding Hamiltonian manages to accurately reproduce the DFT results for an isolated boron-doped graphene nanoribbon. Using a 3D Poisson/Schrödinger solver within the non-equilibrium Green's function (NEGF) formalism, self-consistent calculations of the gate-screened scattering potentials induced by the boron impurities have been performed, allowing the theoretical exploration of the tunability of transistor characteristics. The boron-doped graphene transistors are found to approach unipolar behavior as the boron concentration is increased and, by tuning the density of chemical dopants, the electron-hole transport asymmetry can be finely adjusted. Correspondingly, the onset of a mobility gap in the device is observed. Although the computed asymmetries are not sufficient to warrant proper device operation, our results represent an initial step in the direction of improved transfer characteristics and, in particular, the developed simulation strategy is a powerful new tool for modeling doped graphene nanostructures. SN - 1936-086X UR - https://www.unboundmedicine.com/medline/citation/22876866/Atomistic_boron_doped_graphene_field_effect_transistors:_a_route_toward_unipolar_characteristics_ L2 - https://doi.org/10.1021/nn3024046 DB - PRIME DP - Unbound Medicine ER -