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Solution-processable organic dielectrics for graphene electronics.
Nanotechnology. 2012 Aug 31; 23(34):344017.N

Abstract

We report the fabrication, at low-temperature, of solution processed graphene transistors based on carefully engineered graphene/organic dielectric interfaces. Graphene transistors based on these interfaces show improved performance and reliability when compared with traditional SiO(2) based devices. The dielectric materials investigated include Hyflon AD (Solvay), a low-k fluoropolymer, and various organic self-assembled monolayer (SAM) nanodielectrics. Both types of dielectric are solution processed and yield graphene transistors with similar operating characteristics, namely high charge carrier mobility, hysteresis free operation, negligible doping effect and improved operating stability as compared to bare SiO(2) based devices. Importantly, the use of SAM nanodielectrics enables the demonstration of low operating voltage (< |1.5| V), solution-processable and flexible graphene transistors with tunable doping characteristics through molecular engineering of the SAM's molecular length and terminal group. The work is a significant step towards graphene microelectronics where large-volume and low-temperature processing are required.

Authors+Show Affiliations

Department of Materials, Imperial College London, London, UK. c.mattevi@ic.ac.ukNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

22885685

Citation

Mattevi, Cecilia, et al. "Solution-processable Organic Dielectrics for Graphene Electronics." Nanotechnology, vol. 23, no. 34, 2012, p. 344017.
Mattevi C, Colléaux F, Kim H, et al. Solution-processable organic dielectrics for graphene electronics. Nanotechnology. 2012;23(34):344017.
Mattevi, C., Colléaux, F., Kim, H., Lin, Y. H., Park, K. T., Chhowalla, M., & Anthopoulos, T. D. (2012). Solution-processable organic dielectrics for graphene electronics. Nanotechnology, 23(34), 344017. https://doi.org/10.1088/0957-4484/23/34/344017
Mattevi C, et al. Solution-processable Organic Dielectrics for Graphene Electronics. Nanotechnology. 2012 Aug 31;23(34):344017. PubMed PMID: 22885685.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Solution-processable organic dielectrics for graphene electronics. AU - Mattevi,Cecilia, AU - Colléaux,Florian, AU - Kim,HoKwon, AU - Lin,Yen-Hung, AU - Park,Kyung T, AU - Chhowalla,Manish, AU - Anthopoulos,Thomas D, Y1 - 2012/08/10/ PY - 2012/8/14/entrez PY - 2012/8/14/pubmed PY - 2012/8/14/medline SP - 344017 EP - 344017 JF - Nanotechnology JO - Nanotechnology VL - 23 IS - 34 N2 - We report the fabrication, at low-temperature, of solution processed graphene transistors based on carefully engineered graphene/organic dielectric interfaces. Graphene transistors based on these interfaces show improved performance and reliability when compared with traditional SiO(2) based devices. The dielectric materials investigated include Hyflon AD (Solvay), a low-k fluoropolymer, and various organic self-assembled monolayer (SAM) nanodielectrics. Both types of dielectric are solution processed and yield graphene transistors with similar operating characteristics, namely high charge carrier mobility, hysteresis free operation, negligible doping effect and improved operating stability as compared to bare SiO(2) based devices. Importantly, the use of SAM nanodielectrics enables the demonstration of low operating voltage (< |1.5| V), solution-processable and flexible graphene transistors with tunable doping characteristics through molecular engineering of the SAM's molecular length and terminal group. The work is a significant step towards graphene microelectronics where large-volume and low-temperature processing are required. SN - 1361-6528 UR - https://www.unboundmedicine.com/medline/citation/22885685/Solution_processable_organic_dielectrics_for_graphene_electronics_ L2 - https://doi.org/10.1088/0957-4484/23/34/344017 DB - PRIME DP - Unbound Medicine ER -
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