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Synthesis and characterization of hexagonal boron nitride film as a dielectric layer for graphene devices.
ACS Nano. 2012 Oct 23; 6(10):8583-90.AN

Abstract

Hexagonal boron nitride (h-BN) is a promising material as a dielectric layer or substrate for two-dimensional electronic devices. In this work, we report the synthesis of large-area h-BN film using atmospheric pressure chemical vapor deposition on a copper foil, followed by Cu etching and transfer to a target substrate. The growth rate of h-BN film at a constant temperature is strongly affected by the concentration of borazine as a precursor and the ambient gas condition such as the ratio of hydrogen and nitrogen. h-BN films with different thicknesses can be achieved by controlling the growth time or tuning the growth conditions. Transmission electron microscope characterization reveals that these h-BN films are polycrystalline, and the c-axis of the crystallites points to different directions. The stoichiometry ratio of boron and nitrogen is close to 1:1, obtained by electron energy loss spectroscopy. The dielectric constant of h-BN film obtained by parallel capacitance measurements (25 μm(2) large areas) is 2-4. These CVD-grown h-BN films were integrated as a dielectric layer in top-gated CVD graphene devices, and the mobility of the CVD graphene device (in the few thousands cm(2)/(V·s) range) remains the same before and after device integration.

Authors+Show Affiliations

Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, U.S. Gov't, Non-P.H.S.

Language

eng

PubMed ID

22970651

Citation

Kim, Ki Kang, et al. "Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices." ACS Nano, vol. 6, no. 10, 2012, pp. 8583-90.
Kim KK, Hsu A, Jia X, et al. Synthesis and characterization of hexagonal boron nitride film as a dielectric layer for graphene devices. ACS Nano. 2012;6(10):8583-90.
Kim, K. K., Hsu, A., Jia, X., Kim, S. M., Shi, Y., Dresselhaus, M., Palacios, T., & Kong, J. (2012). Synthesis and characterization of hexagonal boron nitride film as a dielectric layer for graphene devices. ACS Nano, 6(10), 8583-90. https://doi.org/10.1021/nn301675f
Kim KK, et al. Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices. ACS Nano. 2012 Oct 23;6(10):8583-90. PubMed PMID: 22970651.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Synthesis and characterization of hexagonal boron nitride film as a dielectric layer for graphene devices. AU - Kim,Ki Kang, AU - Hsu,Allen, AU - Jia,Xiaoting, AU - Kim,Soo Min, AU - Shi,Yumeng, AU - Dresselhaus,Mildred, AU - Palacios,Tomas, AU - Kong,Jing, Y1 - 2012/09/20/ PY - 2012/9/14/entrez PY - 2012/9/14/pubmed PY - 2013/3/23/medline SP - 8583 EP - 90 JF - ACS nano JO - ACS Nano VL - 6 IS - 10 N2 - Hexagonal boron nitride (h-BN) is a promising material as a dielectric layer or substrate for two-dimensional electronic devices. In this work, we report the synthesis of large-area h-BN film using atmospheric pressure chemical vapor deposition on a copper foil, followed by Cu etching and transfer to a target substrate. The growth rate of h-BN film at a constant temperature is strongly affected by the concentration of borazine as a precursor and the ambient gas condition such as the ratio of hydrogen and nitrogen. h-BN films with different thicknesses can be achieved by controlling the growth time or tuning the growth conditions. Transmission electron microscope characterization reveals that these h-BN films are polycrystalline, and the c-axis of the crystallites points to different directions. The stoichiometry ratio of boron and nitrogen is close to 1:1, obtained by electron energy loss spectroscopy. The dielectric constant of h-BN film obtained by parallel capacitance measurements (25 μm(2) large areas) is 2-4. These CVD-grown h-BN films were integrated as a dielectric layer in top-gated CVD graphene devices, and the mobility of the CVD graphene device (in the few thousands cm(2)/(V·s) range) remains the same before and after device integration. SN - 1936-086X UR - https://www.unboundmedicine.com/medline/citation/22970651/Synthesis_and_characterization_of_hexagonal_boron_nitride_film_as_a_dielectric_layer_for_graphene_devices_ L2 - https://doi.org/10.1021/nn301675f DB - PRIME DP - Unbound Medicine ER -