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Direct growth of doping-density-controlled hexagonal graphene on SiO2 substrate by rapid-heating plasma CVD.
ACS Nano. 2012 Oct 23; 6(10):8508-15.AN

Abstract

A transfer-free method for growing carrier-density-controlled graphene directly on a SiO(2) substrate has been realized for the first time by rapid-heating plasma chemical vapor deposition (RH-PCVD). Using this method, high-quality single-layer graphene sheets with a hexagonal domain can be selectively grown between a Ni film and a SiO(2) substrate. Systematic investigations reveal that the relatively thin Ni layer, rapid heating, and plasma CVD are critical to the success of this unique method of graphene growth. By applying this technique, an easy and scalable graphene-based field effect transistor (FET) fabrication is also demonstrated. The electrical transport type of the graphene-based FET can be precisely tuned by adjusting the NH(3) gas concentration during the RH-PCVD process.

Authors+Show Affiliations

Department of Electronic Engineering, Tohoku University, Aoba 6-6-05, Aramaki-Aza, Sendai 980-8579, Japan. kato12@ecei.tohoku.ac.jpNo affiliation info available

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

22971147

Citation

Kato, Toshiaki, and Rikizo Hatakeyama. "Direct Growth of Doping-density-controlled Hexagonal Graphene On SiO2 Substrate By Rapid-heating Plasma CVD." ACS Nano, vol. 6, no. 10, 2012, pp. 8508-15.
Kato T, Hatakeyama R. Direct growth of doping-density-controlled hexagonal graphene on SiO2 substrate by rapid-heating plasma CVD. ACS Nano. 2012;6(10):8508-15.
Kato, T., & Hatakeyama, R. (2012). Direct growth of doping-density-controlled hexagonal graphene on SiO2 substrate by rapid-heating plasma CVD. ACS Nano, 6(10), 8508-15. https://doi.org/10.1021/nn302290z
Kato T, Hatakeyama R. Direct Growth of Doping-density-controlled Hexagonal Graphene On SiO2 Substrate By Rapid-heating Plasma CVD. ACS Nano. 2012 Oct 23;6(10):8508-15. PubMed PMID: 22971147.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Direct growth of doping-density-controlled hexagonal graphene on SiO2 substrate by rapid-heating plasma CVD. AU - Kato,Toshiaki, AU - Hatakeyama,Rikizo, Y1 - 2012/09/12/ PY - 2012/9/14/entrez PY - 2012/9/14/pubmed PY - 2013/3/23/medline SP - 8508 EP - 15 JF - ACS nano JO - ACS Nano VL - 6 IS - 10 N2 - A transfer-free method for growing carrier-density-controlled graphene directly on a SiO(2) substrate has been realized for the first time by rapid-heating plasma chemical vapor deposition (RH-PCVD). Using this method, high-quality single-layer graphene sheets with a hexagonal domain can be selectively grown between a Ni film and a SiO(2) substrate. Systematic investigations reveal that the relatively thin Ni layer, rapid heating, and plasma CVD are critical to the success of this unique method of graphene growth. By applying this technique, an easy and scalable graphene-based field effect transistor (FET) fabrication is also demonstrated. The electrical transport type of the graphene-based FET can be precisely tuned by adjusting the NH(3) gas concentration during the RH-PCVD process. SN - 1936-086X UR - https://www.unboundmedicine.com/medline/citation/22971147/Direct_growth_of_doping_density_controlled_hexagonal_graphene_on_SiO2_substrate_by_rapid_heating_plasma_CVD_ L2 - https://doi.org/10.1021/nn302290z DB - PRIME DP - Unbound Medicine ER -