Tags

Type your tag names separated by a space and hit enter

Improved transfer of graphene for gated Schottky-junction, vertical, organic, field-effect transistors.
ACS Nano. 2012 Oct 23; 6(10):9095-102.AN

Abstract

An improved process for graphene transfer was used to demonstrate high performance graphene enabled vertical organic field effect transistors (G-VFETs). The process reduces disorder and eliminates the polymeric residue that typically plagues transferred films. The method also allows for purposely creating pores in the graphene of a controlled areal density. Transconductance observed in G-VFETs fabricated with a continuous (pore-free) graphene source electrode is attributed to modulation of the contact barrier height between the graphene and organic semiconductor due to a gate field induced Fermi level shift in the low density of electronic-states graphene electrode. Pores introduced in the graphene source electrode are shown to boost the G-VFET performance, which scales with the areal pore density taking advantage of both barrier height lowering and tunnel barrier thinning. Devices with areal pore densities of 20% exhibit on/off ratios and output current densities exceeding 10(6) and 200 mA/cm(2), respectively, at drain voltages below 5 V.

Authors+Show Affiliations

Department of Materials Science & Engineering, University of Florida, Gainesville, Florida 32611, USA.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.

Language

eng

PubMed ID

23002806

Citation

Lemaitre, Maxime G., et al. "Improved Transfer of Graphene for Gated Schottky-junction, Vertical, Organic, Field-effect Transistors." ACS Nano, vol. 6, no. 10, 2012, pp. 9095-102.
Lemaitre MG, Donoghue EP, McCarthy MA, et al. Improved transfer of graphene for gated Schottky-junction, vertical, organic, field-effect transistors. ACS Nano. 2012;6(10):9095-102.
Lemaitre, M. G., Donoghue, E. P., McCarthy, M. A., Liu, B., Tongay, S., Gila, B., Kumar, P., Singh, R. K., Appleton, B. R., & Rinzler, A. G. (2012). Improved transfer of graphene for gated Schottky-junction, vertical, organic, field-effect transistors. ACS Nano, 6(10), 9095-102. https://doi.org/10.1021/nn303848k
Lemaitre MG, et al. Improved Transfer of Graphene for Gated Schottky-junction, Vertical, Organic, Field-effect Transistors. ACS Nano. 2012 Oct 23;6(10):9095-102. PubMed PMID: 23002806.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Improved transfer of graphene for gated Schottky-junction, vertical, organic, field-effect transistors. AU - Lemaitre,Maxime G, AU - Donoghue,Evan P, AU - McCarthy,Mitchell A, AU - Liu,Bo, AU - Tongay,Sefaattin, AU - Gila,Brent, AU - Kumar,Purushottam, AU - Singh,Rajiv K, AU - Appleton,Bill R, AU - Rinzler,Andrew G, Y1 - 2012/09/28/ PY - 2012/9/26/entrez PY - 2012/9/26/pubmed PY - 2013/3/23/medline SP - 9095 EP - 102 JF - ACS nano JO - ACS Nano VL - 6 IS - 10 N2 - An improved process for graphene transfer was used to demonstrate high performance graphene enabled vertical organic field effect transistors (G-VFETs). The process reduces disorder and eliminates the polymeric residue that typically plagues transferred films. The method also allows for purposely creating pores in the graphene of a controlled areal density. Transconductance observed in G-VFETs fabricated with a continuous (pore-free) graphene source electrode is attributed to modulation of the contact barrier height between the graphene and organic semiconductor due to a gate field induced Fermi level shift in the low density of electronic-states graphene electrode. Pores introduced in the graphene source electrode are shown to boost the G-VFET performance, which scales with the areal pore density taking advantage of both barrier height lowering and tunnel barrier thinning. Devices with areal pore densities of 20% exhibit on/off ratios and output current densities exceeding 10(6) and 200 mA/cm(2), respectively, at drain voltages below 5 V. SN - 1936-086X UR - https://www.unboundmedicine.com/medline/citation/23002806/Improved_transfer_of_graphene_for_gated_Schottky_junction_vertical_organic_field_effect_transistors_ L2 - https://doi.org/10.1021/nn303848k DB - PRIME DP - Unbound Medicine ER -