Tags

Type your tag names separated by a space and hit enter

Fabrication and characterization of solution processed n-ZnO nanowire/p-Si heterojunction device.
J Nanosci Nanotechnol 2012; 12(9):6948-54JN

Abstract

This paper reports the results on the fabrication and characterization of n-ZnO nanowire/p-Si heterojunction devices. ZnO nanowires were grown on p-Si substrates by two step chemical solution process at low temperature. The ZnO nanowires grown vertically on silicon substrates were characterized by FESEM, EDX and PL. Heterojunction devices of n-ZnO nanowires/p-Si were fabricated and characterized for their photo, thermal and electrical responses. The ZnO nanowires grown were found to show piezoelectric nature and its effect has also been demonstrated. I-V characteristics of the fabricated n-ZnO/p-Si hetero-junction device showed rectifying behavior at different temperatures. The turn-on voltage of the fabricated ZnO nanowire/silicon devices was 0.45 V in the ambient condition. The ideality factor of the devices determined at low bias voltage is about 7.5, which indicates the defects induced tunneling of the junction.

Authors+Show Affiliations

Millimeter-Wave Innovation Technology Research Center (MINT), Dongguk University, Seoul 100-715, Korea.No affiliation info available

Pub Type(s)

Journal Article

Language

eng

PubMed ID

23035419

Citation

Kathalingam, A, and Jin-Koo Rhee. "Fabrication and Characterization of Solution Processed n-ZnO nanowire/p-Si Heterojunction Device." Journal of Nanoscience and Nanotechnology, vol. 12, no. 9, 2012, pp. 6948-54.
Kathalingam A, Rhee JK. Fabrication and characterization of solution processed n-ZnO nanowire/p-Si heterojunction device. J Nanosci Nanotechnol. 2012;12(9):6948-54.
Kathalingam, A., & Rhee, J. K. (2012). Fabrication and characterization of solution processed n-ZnO nanowire/p-Si heterojunction device. Journal of Nanoscience and Nanotechnology, 12(9), pp. 6948-54.
Kathalingam A, Rhee JK. Fabrication and Characterization of Solution Processed n-ZnO nanowire/p-Si Heterojunction Device. J Nanosci Nanotechnol. 2012;12(9):6948-54. PubMed PMID: 23035419.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Fabrication and characterization of solution processed n-ZnO nanowire/p-Si heterojunction device. AU - Kathalingam,A, AU - Rhee,Jin-Koo, PY - 2012/10/6/entrez PY - 2012/10/6/pubmed PY - 2012/10/6/medline SP - 6948 EP - 54 JF - Journal of nanoscience and nanotechnology JO - J Nanosci Nanotechnol VL - 12 IS - 9 N2 - This paper reports the results on the fabrication and characterization of n-ZnO nanowire/p-Si heterojunction devices. ZnO nanowires were grown on p-Si substrates by two step chemical solution process at low temperature. The ZnO nanowires grown vertically on silicon substrates were characterized by FESEM, EDX and PL. Heterojunction devices of n-ZnO nanowires/p-Si were fabricated and characterized for their photo, thermal and electrical responses. The ZnO nanowires grown were found to show piezoelectric nature and its effect has also been demonstrated. I-V characteristics of the fabricated n-ZnO/p-Si hetero-junction device showed rectifying behavior at different temperatures. The turn-on voltage of the fabricated ZnO nanowire/silicon devices was 0.45 V in the ambient condition. The ideality factor of the devices determined at low bias voltage is about 7.5, which indicates the defects induced tunneling of the junction. SN - 1533-4880 UR - https://www.unboundmedicine.com/medline/citation/23035419/Fabrication_and_characterization_of_solution_processed_n_ZnO_nanowire/p_Si_heterojunction_device_ DB - PRIME DP - Unbound Medicine ER -
Unbound Prime app for iOS iPhone iPadUnbound PubMed app for AndroidAlso Available:
Unbound MEDLINE
Unbound PubMed app for Windows