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Reducing contact resistance in graphene devices through contact area patterning.
ACS Nano. 2013 Apr 23; 7(4):3661-7.AN

Abstract

Performance of graphene electronics is limited by contact resistance associated with the metal-graphene (M-G) interface, where unique transport challenges arise as carriers are injected from a 3D metal into a 2D-graphene sheet. In this work, enhanced carrier injection is experimentally achieved in graphene devices by forming cuts in the graphene within the contact regions. These cuts are oriented normal to the channel and facilitate bonding between the contact metal and carbon atoms at the graphene cut edges, reproducibly maximizing "edge-contacted" injection. Despite the reduction in M-G contact area caused by these cuts, we find that a 32% reduction in contact resistance results in Cu-contacted, two-terminal devices, while a 22% reduction is achieved for top-gated graphene transistors with Pd contacts as compared to conventionally fabricated devices. The crucial role of contact annealing to facilitate this improvement is also elucidated. This simple approach provides a reliable and reproducible means of lowering contact resistance in graphene devices to bolster performance. Importantly, this enhancement requires no additional processing steps.

Authors+Show Affiliations

IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, United States. joshsmit@us.ibm.comNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, U.S. Gov't, Non-P.H.S.

Language

eng

PubMed ID

23473291

Citation

Smith, Joshua T., et al. "Reducing Contact Resistance in Graphene Devices Through Contact Area Patterning." ACS Nano, vol. 7, no. 4, 2013, pp. 3661-7.
Smith JT, Franklin AD, Farmer DB, et al. Reducing contact resistance in graphene devices through contact area patterning. ACS Nano. 2013;7(4):3661-7.
Smith, J. T., Franklin, A. D., Farmer, D. B., & Dimitrakopoulos, C. D. (2013). Reducing contact resistance in graphene devices through contact area patterning. ACS Nano, 7(4), 3661-7. https://doi.org/10.1021/nn400671z
Smith JT, et al. Reducing Contact Resistance in Graphene Devices Through Contact Area Patterning. ACS Nano. 2013 Apr 23;7(4):3661-7. PubMed PMID: 23473291.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Reducing contact resistance in graphene devices through contact area patterning. AU - Smith,Joshua T, AU - Franklin,Aaron D, AU - Farmer,Damon B, AU - Dimitrakopoulos,Christos D, Y1 - 2013/03/08/ PY - 2013/3/12/entrez PY - 2013/3/12/pubmed PY - 2013/10/18/medline SP - 3661 EP - 7 JF - ACS nano JO - ACS Nano VL - 7 IS - 4 N2 - Performance of graphene electronics is limited by contact resistance associated with the metal-graphene (M-G) interface, where unique transport challenges arise as carriers are injected from a 3D metal into a 2D-graphene sheet. In this work, enhanced carrier injection is experimentally achieved in graphene devices by forming cuts in the graphene within the contact regions. These cuts are oriented normal to the channel and facilitate bonding between the contact metal and carbon atoms at the graphene cut edges, reproducibly maximizing "edge-contacted" injection. Despite the reduction in M-G contact area caused by these cuts, we find that a 32% reduction in contact resistance results in Cu-contacted, two-terminal devices, while a 22% reduction is achieved for top-gated graphene transistors with Pd contacts as compared to conventionally fabricated devices. The crucial role of contact annealing to facilitate this improvement is also elucidated. This simple approach provides a reliable and reproducible means of lowering contact resistance in graphene devices to bolster performance. Importantly, this enhancement requires no additional processing steps. SN - 1936-086X UR - https://www.unboundmedicine.com/medline/citation/23473291/Reducing_contact_resistance_in_graphene_devices_through_contact_area_patterning_ L2 - https://doi.org/10.1021/nn400671z DB - PRIME DP - Unbound Medicine ER -