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Nonvolatile memory cells based on MoS2/graphene heterostructures.
ACS Nano. 2013 Apr 23; 7(4):3246-52.AN

Abstract

Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of information storage. MoS2 acts as a channel in an intimate contact with graphene electrodes in a field-effect transistor geometry. Our prototypical all-2D transistor is further integrated with a multilayer graphene charge trapping layer into a device that can be operated as a nonvolatile memory cell. Because of its band gap and 2D nature, monolayer MoS2 is highly sensitive to the presence of charges in the charge trapping layer, resulting in a factor of 10(4) difference between memory program and erase states. The two-dimensional nature of both the contact and the channel can be harnessed for the fabrication of flexible nanoelectronic devices with large-scale integration.

Authors+Show Affiliations

Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.No affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

23510133

Citation

Bertolazzi, Simone, et al. "Nonvolatile Memory Cells Based On MoS2/graphene Heterostructures." ACS Nano, vol. 7, no. 4, 2013, pp. 3246-52.
Bertolazzi S, Krasnozhon D, Kis A. Nonvolatile memory cells based on MoS2/graphene heterostructures. ACS Nano. 2013;7(4):3246-52.
Bertolazzi, S., Krasnozhon, D., & Kis, A. (2013). Nonvolatile memory cells based on MoS2/graphene heterostructures. ACS Nano, 7(4), 3246-52. https://doi.org/10.1021/nn3059136
Bertolazzi S, Krasnozhon D, Kis A. Nonvolatile Memory Cells Based On MoS2/graphene Heterostructures. ACS Nano. 2013 Apr 23;7(4):3246-52. PubMed PMID: 23510133.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Nonvolatile memory cells based on MoS2/graphene heterostructures. AU - Bertolazzi,Simone, AU - Krasnozhon,Daria, AU - Kis,Andras, Y1 - 2013/03/19/ PY - 2013/3/21/entrez PY - 2013/3/21/pubmed PY - 2013/10/18/medline SP - 3246 EP - 52 JF - ACS nano JO - ACS Nano VL - 7 IS - 4 N2 - Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of information storage. MoS2 acts as a channel in an intimate contact with graphene electrodes in a field-effect transistor geometry. Our prototypical all-2D transistor is further integrated with a multilayer graphene charge trapping layer into a device that can be operated as a nonvolatile memory cell. Because of its band gap and 2D nature, monolayer MoS2 is highly sensitive to the presence of charges in the charge trapping layer, resulting in a factor of 10(4) difference between memory program and erase states. The two-dimensional nature of both the contact and the channel can be harnessed for the fabrication of flexible nanoelectronic devices with large-scale integration. SN - 1936-086X UR - https://www.unboundmedicine.com/medline/citation/23510133/Nonvolatile_memory_cells_based_on_MoS2/graphene_heterostructures_ L2 - https://doi.org/10.1021/nn3059136 DB - PRIME DP - Unbound Medicine ER -