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Observing the resistive switching of MgZnO thin film via conducting atomic force microscopy.
J Nanosci Nanotechnol 2013; 13(2):766-70JN

Abstract

Conducting atomic force microscopy (C-AFM) is used to observe the formation and removal of conducting filaments of Mg0.6Zn0.4O thin film at a nanoscale in order to study the mechanisms of resistive switching. C-AFM probe with Pt coating is used as a movable top electrode for measuring local I-V and for C-AFM imaging. Writing and reading of micro-bits on the resistive switching thin film are demonstrated. The local I-V behavior is similar to the macroscopic behavior of the resistive switching thin film. However, the probability for successful in situ detection of resistive switching of formation in the current experiment is only one quarter, much less than that with a macroscopic top electrode. Experimental results are explained using the filament model which illustrates the switching mechanism of the thin film. The current work would be useful for the improvement of resistive switching thin films and their applications.

Authors+Show Affiliations

State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, PR China.No affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article

Language

eng

PubMed ID

23646512

Citation

Li, Chao, et al. "Observing the Resistive Switching of MgZnO Thin Film Via Conducting Atomic Force Microscopy." Journal of Nanoscience and Nanotechnology, vol. 13, no. 2, 2013, pp. 766-70.
Li C, Ding X, Deng C, et al. Observing the resistive switching of MgZnO thin film via conducting atomic force microscopy. J Nanosci Nanotechnol. 2013;13(2):766-70.
Li, C., Ding, X., Deng, C., & Bao, D. (2013). Observing the resistive switching of MgZnO thin film via conducting atomic force microscopy. Journal of Nanoscience and Nanotechnology, 13(2), pp. 766-70.
Li C, et al. Observing the Resistive Switching of MgZnO Thin Film Via Conducting Atomic Force Microscopy. J Nanosci Nanotechnol. 2013;13(2):766-70. PubMed PMID: 23646512.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Observing the resistive switching of MgZnO thin film via conducting atomic force microscopy. AU - Li,Chao, AU - Ding,Xidong, AU - Deng,Chenxing, AU - Bao,Dinghua, PY - 2013/5/8/entrez PY - 2013/5/8/pubmed PY - 2013/5/8/medline SP - 766 EP - 70 JF - Journal of nanoscience and nanotechnology JO - J Nanosci Nanotechnol VL - 13 IS - 2 N2 - Conducting atomic force microscopy (C-AFM) is used to observe the formation and removal of conducting filaments of Mg0.6Zn0.4O thin film at a nanoscale in order to study the mechanisms of resistive switching. C-AFM probe with Pt coating is used as a movable top electrode for measuring local I-V and for C-AFM imaging. Writing and reading of micro-bits on the resistive switching thin film are demonstrated. The local I-V behavior is similar to the macroscopic behavior of the resistive switching thin film. However, the probability for successful in situ detection of resistive switching of formation in the current experiment is only one quarter, much less than that with a macroscopic top electrode. Experimental results are explained using the filament model which illustrates the switching mechanism of the thin film. The current work would be useful for the improvement of resistive switching thin films and their applications. SN - 1533-4880 UR - https://www.unboundmedicine.com/medline/citation/23646512/Observing_the_resistive_switching_of_MgZnO_thin_film_via_conducting_atomic_force_microscopy_ DB - PRIME DP - Unbound Medicine ER -