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Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions.
Nat Mater 2013; 12(7):617-21NM

Abstract

Ferroelectric tunnel junctions (FTJs), composed of two metal electrodes separated by an ultrathin ferroelectric barrier, have attracted much attention as promising candidates for non-volatile resistive memories. Theoretical and experimental works have revealed that the tunnelling resistance switching in FTJs originates mainly from a ferroelectric modulation on the barrier height. However, in these devices, modulation on the barrier width is very limited, although the tunnelling transmittance depends on it exponentially as well. Here we propose a novel tunnelling heterostructure by replacing one of the metal electrodes in a normal FTJ with a heavily doped semiconductor. In these metal/ferroelectric/semiconductor FTJs, not only the height but also the width of the barrier can be electrically modulated as a result of a ferroelectric field effect, leading to a greatly enhanced tunnelling electroresistance. This idea is implemented in Pt/BaTiO3/Nb:SrTiO3 heterostructures, in which an ON/OFF conductance ratio above 10(4), about one to two orders greater than those reported in normal FTJs, can be achieved at room temperature. The giant tunnelling electroresistance, reliable switching reproducibility and long data retention observed in these metal/ferroelectric/semiconductor FTJs suggest their great potential in non-destructive readout non-volatile memories.

Authors

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Pub Type(s)

Letter

Language

eng

PubMed ID

23685861

Citation

Wen, Zheng, et al. "Ferroelectric-field-effect-enhanced Electroresistance in Metal/ferroelectric/semiconductor Tunnel Junctions." Nature Materials, vol. 12, no. 7, 2013, pp. 617-21.
Wen Z, Li C, Wu D, et al. Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions. Nat Mater. 2013;12(7):617-21.
Wen, Z., Li, C., Wu, D., Li, A., & Ming, N. (2013). Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions. Nature Materials, 12(7), pp. 617-21. doi:10.1038/nmat3649.
Wen Z, et al. Ferroelectric-field-effect-enhanced Electroresistance in Metal/ferroelectric/semiconductor Tunnel Junctions. Nat Mater. 2013;12(7):617-21. PubMed PMID: 23685861.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions. AU - Wen,Zheng, AU - Li,Chen, AU - Wu,Di, AU - Li,Aidong, AU - Ming,Naiben, Y1 - 2013/05/19/ PY - 2012/08/30/received PY - 2013/04/05/accepted PY - 2013/5/21/entrez PY - 2013/5/21/pubmed PY - 2013/5/21/medline SP - 617 EP - 21 JF - Nature materials JO - Nat Mater VL - 12 IS - 7 N2 - Ferroelectric tunnel junctions (FTJs), composed of two metal electrodes separated by an ultrathin ferroelectric barrier, have attracted much attention as promising candidates for non-volatile resistive memories. Theoretical and experimental works have revealed that the tunnelling resistance switching in FTJs originates mainly from a ferroelectric modulation on the barrier height. However, in these devices, modulation on the barrier width is very limited, although the tunnelling transmittance depends on it exponentially as well. Here we propose a novel tunnelling heterostructure by replacing one of the metal electrodes in a normal FTJ with a heavily doped semiconductor. In these metal/ferroelectric/semiconductor FTJs, not only the height but also the width of the barrier can be electrically modulated as a result of a ferroelectric field effect, leading to a greatly enhanced tunnelling electroresistance. This idea is implemented in Pt/BaTiO3/Nb:SrTiO3 heterostructures, in which an ON/OFF conductance ratio above 10(4), about one to two orders greater than those reported in normal FTJs, can be achieved at room temperature. The giant tunnelling electroresistance, reliable switching reproducibility and long data retention observed in these metal/ferroelectric/semiconductor FTJs suggest their great potential in non-destructive readout non-volatile memories. SN - 1476-1122 UR - https://www.unboundmedicine.com/medline/citation/23685861/Ferroelectric_field_effect_enhanced_electroresistance_in_metal/ferroelectric/semiconductor_tunnel_junctions_ L2 - http://dx.doi.org/10.1038/nmat3649 DB - PRIME DP - Unbound Medicine ER -