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Stochastic memristive devices for computing and neuromorphic applications.
Nanoscale. 2013 Jul 07; 5(13):5872-8.N

Abstract

Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially large variations in space and time in these nanoscale devices. Here we show that in metal-filament based memristive devices the switching can be fully stochastic. While individual switching events are random, the distribution and probability of switching can be well predicted and controlled. Rather than trying to force high switching probabilities using excess voltage or time, the inherent stochastic nature of resistive switching allows these binary devices to be used as building blocks for novel error-tolerant computing schemes such as stochastic computing and provides the needed "analog" feature for neuromorphic applications. To verify such potential, we demonstrated memristor-based stochastic bitstreams in both time and space domains, and show that an array of binary memristors can act as a multi-level "analog" device for neuromorphic applications.

Authors+Show Affiliations

Department of Electrical Engineering and Computer Science, University of Michigan, MI 48109, USA.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, U.S. Gov't, Non-P.H.S.

Language

eng

PubMed ID

23698627

Citation

Gaba, Siddharth, et al. "Stochastic Memristive Devices for Computing and Neuromorphic Applications." Nanoscale, vol. 5, no. 13, 2013, pp. 5872-8.
Gaba S, Sheridan P, Zhou J, et al. Stochastic memristive devices for computing and neuromorphic applications. Nanoscale. 2013;5(13):5872-8.
Gaba, S., Sheridan, P., Zhou, J., Choi, S., & Lu, W. (2013). Stochastic memristive devices for computing and neuromorphic applications. Nanoscale, 5(13), 5872-8. https://doi.org/10.1039/c3nr01176c
Gaba S, et al. Stochastic Memristive Devices for Computing and Neuromorphic Applications. Nanoscale. 2013 Jul 7;5(13):5872-8. PubMed PMID: 23698627.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Stochastic memristive devices for computing and neuromorphic applications. AU - Gaba,Siddharth, AU - Sheridan,Patrick, AU - Zhou,Jiantao, AU - Choi,Shinhyun, AU - Lu,Wei, Y1 - 2013/05/22/ PY - 2013/5/24/entrez PY - 2013/5/24/pubmed PY - 2013/5/24/medline SP - 5872 EP - 8 JF - Nanoscale JO - Nanoscale VL - 5 IS - 13 N2 - Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially large variations in space and time in these nanoscale devices. Here we show that in metal-filament based memristive devices the switching can be fully stochastic. While individual switching events are random, the distribution and probability of switching can be well predicted and controlled. Rather than trying to force high switching probabilities using excess voltage or time, the inherent stochastic nature of resistive switching allows these binary devices to be used as building blocks for novel error-tolerant computing schemes such as stochastic computing and provides the needed "analog" feature for neuromorphic applications. To verify such potential, we demonstrated memristor-based stochastic bitstreams in both time and space domains, and show that an array of binary memristors can act as a multi-level "analog" device for neuromorphic applications. SN - 2040-3372 UR - https://www.unboundmedicine.com/medline/citation/23698627/Stochastic_memristive_devices_for_computing_and_neuromorphic_applications_ L2 - https://doi.org/10.1039/c3nr01176c DB - PRIME DP - Unbound Medicine ER -
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