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Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11,000 cm(2)/V·s.
ACS Nano. 2013 Jul 23; 7(7):5818-23.AN

Abstract

Utilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) high-κ gate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11,000 cm(2)/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low tox/Wgraphene ratio, and scaled high-κ dielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance.

Authors+Show Affiliations

Integrated Nanotechnology Lab, Electrical Engineering Program, Computer Electrical Mathematical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia. casey.smith@kaust.edu.saNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article

Language

eng

PubMed ID

23777434

Citation

Smith, Casey, et al. "Low-voltage Back-gated Atmospheric Pressure Chemical Vapor Deposition Based Graphene-striped Channel Transistor With High-κ Dielectric Showing Room-temperature Mobility > 11,000 Cm(2)/V·s." ACS Nano, vol. 7, no. 7, 2013, pp. 5818-23.
Smith C, Qaisi R, Liu Z, et al. Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11,000 cm(2)/V·s. ACS Nano. 2013;7(7):5818-23.
Smith, C., Qaisi, R., Liu, Z., Yu, Q., & Hussain, M. M. (2013). Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11,000 cm(2)/V·s. ACS Nano, 7(7), 5818-23. https://doi.org/10.1021/nn400796b
Smith C, et al. Low-voltage Back-gated Atmospheric Pressure Chemical Vapor Deposition Based Graphene-striped Channel Transistor With High-κ Dielectric Showing Room-temperature Mobility > 11,000 Cm(2)/V·s. ACS Nano. 2013 Jul 23;7(7):5818-23. PubMed PMID: 23777434.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11,000 cm(2)/V·s. AU - Smith,Casey, AU - Qaisi,Ramy, AU - Liu,Zhihong, AU - Yu,Qingkai, AU - Hussain,Muhammad Mustafa, Y1 - 2013/06/20/ PY - 2013/6/20/entrez PY - 2013/6/20/pubmed PY - 2013/10/18/medline SP - 5818 EP - 23 JF - ACS nano JO - ACS Nano VL - 7 IS - 7 N2 - Utilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) high-κ gate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11,000 cm(2)/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low tox/Wgraphene ratio, and scaled high-κ dielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance. SN - 1936-086X UR - https://www.unboundmedicine.com/medline/citation/23777434/Low_voltage_back_gated_atmospheric_pressure_chemical_vapor_deposition_based_graphene_striped_channel_transistor_with_high_κ_dielectric_showing_room_temperature_mobility_>_11000_cm_2_/V·s_ L2 - https://dx.doi.org/10.1021/nn400796b DB - PRIME DP - Unbound Medicine ER -