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Dynamic evolution of conducting nanofilament in resistive switching memories.
Nano Lett 2013; 13(8):3671-7NL

Abstract

Resistive random access memory (ReRAM) has been considered the most promising next-generation nonvolatile memory. In recent years, the switching behavior has been widely reported, and understanding the switching mechanism can improve the stability and scalability of devices. We designed an innovative sample structure for in situ transmission electron microscopy (TEM) to observe the formation of conductive filaments in the Pt/ZnO/Pt structure in real time. The corresponding current-voltage measurements help us to understand the switching mechanism of ZnO film. In addition, high-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) have been used to identify the atomic structure and components of the filament/disrupted region, determining that the conducting paths are caused by the conglomeration of zinc atoms. The behavior of resistive switching is due to the migration of oxygen ions, leading to transformation between Zn-dominated ZnO(1-x) and ZnO.

Authors+Show Affiliations

Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu City, Taiwan.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article

Language

eng

PubMed ID

23855543

Citation

Chen, Jui-Yuan, et al. "Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories." Nano Letters, vol. 13, no. 8, 2013, pp. 3671-7.
Chen JY, Hsin CL, Huang CW, et al. Dynamic evolution of conducting nanofilament in resistive switching memories. Nano Lett. 2013;13(8):3671-7.
Chen, J. Y., Hsin, C. L., Huang, C. W., Chiu, C. H., Huang, Y. T., Lin, S. J., ... Chen, L. J. (2013). Dynamic evolution of conducting nanofilament in resistive switching memories. Nano Letters, 13(8), pp. 3671-7. doi:10.1021/nl4015638.
Chen JY, et al. Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories. Nano Lett. 2013 Aug 14;13(8):3671-7. PubMed PMID: 23855543.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Dynamic evolution of conducting nanofilament in resistive switching memories. AU - Chen,Jui-Yuan, AU - Hsin,Cheng-Lun, AU - Huang,Chun-Wei, AU - Chiu,Chung-Hua, AU - Huang,Yu-Ting, AU - Lin,Su-Jien, AU - Wu,Wen-Wei, AU - Chen,Lih-Juann, Y1 - 2013/07/19/ PY - 2013/7/17/entrez PY - 2013/7/17/pubmed PY - 2013/7/17/medline SP - 3671 EP - 7 JF - Nano letters JO - Nano Lett. VL - 13 IS - 8 N2 - Resistive random access memory (ReRAM) has been considered the most promising next-generation nonvolatile memory. In recent years, the switching behavior has been widely reported, and understanding the switching mechanism can improve the stability and scalability of devices. We designed an innovative sample structure for in situ transmission electron microscopy (TEM) to observe the formation of conductive filaments in the Pt/ZnO/Pt structure in real time. The corresponding current-voltage measurements help us to understand the switching mechanism of ZnO film. In addition, high-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) have been used to identify the atomic structure and components of the filament/disrupted region, determining that the conducting paths are caused by the conglomeration of zinc atoms. The behavior of resistive switching is due to the migration of oxygen ions, leading to transformation between Zn-dominated ZnO(1-x) and ZnO. SN - 1530-6992 UR - https://www.unboundmedicine.com/medline/citation/23855543/Dynamic_evolution_of_conducting_nanofilament_in_resistive_switching_memories_ L2 - https://dx.doi.org/10.1021/nl4015638 DB - PRIME DP - Unbound Medicine ER -