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Photo-patternable ion gel-gated graphene transistors and inverters on plastic.
Nanotechnology. 2014 Jan 10; 25(1):014002.N

Abstract

We demonstrate photo-patternable ion gel-gated graphene transistors and inverters on plastic substrates. The photo-patternable ion gel can be used as a negative photoresist for the patterning of underlying graphene as well as gate dielectrics. As a result, an extra graphene-patterning step is not required, which simplifies the device fabrication and avoids a side effect arising from the photoresist residue. The high capacitance of ion gel gate dielectrics yielded a low voltage operation (~2 V) of the graphene transistor and inverter. The graphene transistors on plastic showed an on/off-current ratio of ~11.5, along with hole and electron mobilities of 852 ± 124 and 452 ± 98 cm(2) V(-1) s(-1), respectively. In addition, the flexible graphene inverter was successfully fabricated on plastic through the potential superposition effect from the drain bias. These devices show excellent mechanical flexibility and fatigue stability.

Authors+Show Affiliations

School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea. School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

24334373

Citation

Lee, Seoung-Ki, et al. "Photo-patternable Ion Gel-gated Graphene Transistors and Inverters On Plastic." Nanotechnology, vol. 25, no. 1, 2014, p. 014002.
Lee SK, Kabir SM, Sharma BK, et al. Photo-patternable ion gel-gated graphene transistors and inverters on plastic. Nanotechnology. 2014;25(1):014002.
Lee, S. K., Kabir, S. M., Sharma, B. K., Kim, B. J., Cho, J. H., & Ahn, J. H. (2014). Photo-patternable ion gel-gated graphene transistors and inverters on plastic. Nanotechnology, 25(1), 014002. https://doi.org/10.1088/0957-4484/25/1/014002
Lee SK, et al. Photo-patternable Ion Gel-gated Graphene Transistors and Inverters On Plastic. Nanotechnology. 2014 Jan 10;25(1):014002. PubMed PMID: 24334373.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Photo-patternable ion gel-gated graphene transistors and inverters on plastic. AU - Lee,Seoung-Ki, AU - Kabir,S M Humayun, AU - Sharma,Bhupendra K, AU - Kim,Beom Joon, AU - Cho,Jeong Ho, AU - Ahn,Jong-Hyun, Y1 - 2013/12/11/ PY - 2013/12/17/entrez PY - 2013/12/18/pubmed PY - 2013/12/18/medline SP - 014002 EP - 014002 JF - Nanotechnology JO - Nanotechnology VL - 25 IS - 1 N2 - We demonstrate photo-patternable ion gel-gated graphene transistors and inverters on plastic substrates. The photo-patternable ion gel can be used as a negative photoresist for the patterning of underlying graphene as well as gate dielectrics. As a result, an extra graphene-patterning step is not required, which simplifies the device fabrication and avoids a side effect arising from the photoresist residue. The high capacitance of ion gel gate dielectrics yielded a low voltage operation (~2 V) of the graphene transistor and inverter. The graphene transistors on plastic showed an on/off-current ratio of ~11.5, along with hole and electron mobilities of 852 ± 124 and 452 ± 98 cm(2) V(-1) s(-1), respectively. In addition, the flexible graphene inverter was successfully fabricated on plastic through the potential superposition effect from the drain bias. These devices show excellent mechanical flexibility and fatigue stability. SN - 1361-6528 UR - https://www.unboundmedicine.com/medline/citation/24334373/Photo_patternable_ion_gel_gated_graphene_transistors_and_inverters_on_plastic_ L2 - https://doi.org/10.1088/0957-4484/25/1/014002 DB - PRIME DP - Unbound Medicine ER -
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