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Confinement of ferroelectric domain-wall motion at artificially formed conducting-nanofilaments in epitaxial BiFeO3 thin films.
ACS Appl Mater Interfaces 2014; 6(9):6346-50AA

Abstract

We report confinement of ferroelectric domain-wall motion at conducting-nanofilament wall in epitaxial BiFeO3 thin film on Nb-doped SrTiO3 substrate. The BiFeO3 film exhibited well-defined ferroelectric response and unipolar resistive switching behavior. We artificially formed conducting-nanofilaments in the BiFeO3 via conducting atomic force microscope techniques. The conducting-nanofilament wall, which does not possess any ferroelectric polarization, is then able to block domain propagation. Consequently, we demonstrate that the domain-wall motion is effectively confined within the conducting-nanofilament wall during polarization switching. This significant new insight potentially gives an opportunity for the artificial manipulation of nanoscale ferroelectric domain.

Authors+Show Affiliations

Department of Chemical Engineering, Stanford University , 381 North-South Mall, Stanford, California 94305, United States.No affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

24749974

Citation

Kim, Woo-Hee, et al. "Confinement of Ferroelectric Domain-wall Motion at Artificially Formed Conducting-nanofilaments in Epitaxial BiFeO3 Thin Films." ACS Applied Materials & Interfaces, vol. 6, no. 9, 2014, pp. 6346-50.
Kim WH, Son JY, Jang HM. Confinement of ferroelectric domain-wall motion at artificially formed conducting-nanofilaments in epitaxial BiFeO3 thin films. ACS Appl Mater Interfaces. 2014;6(9):6346-50.
Kim, W. H., Son, J. Y., & Jang, H. M. (2014). Confinement of ferroelectric domain-wall motion at artificially formed conducting-nanofilaments in epitaxial BiFeO3 thin films. ACS Applied Materials & Interfaces, 6(9), pp. 6346-50. doi:10.1021/am501630k.
Kim WH, Son JY, Jang HM. Confinement of Ferroelectric Domain-wall Motion at Artificially Formed Conducting-nanofilaments in Epitaxial BiFeO3 Thin Films. ACS Appl Mater Interfaces. 2014 May 14;6(9):6346-50. PubMed PMID: 24749974.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Confinement of ferroelectric domain-wall motion at artificially formed conducting-nanofilaments in epitaxial BiFeO3 thin films. AU - Kim,Woo-Hee, AU - Son,Jong Yeog, AU - Jang,Hyun Myung, Y1 - 2014/04/30/ PY - 2014/4/23/entrez PY - 2014/4/23/pubmed PY - 2014/4/23/medline SP - 6346 EP - 50 JF - ACS applied materials & interfaces JO - ACS Appl Mater Interfaces VL - 6 IS - 9 N2 - We report confinement of ferroelectric domain-wall motion at conducting-nanofilament wall in epitaxial BiFeO3 thin film on Nb-doped SrTiO3 substrate. The BiFeO3 film exhibited well-defined ferroelectric response and unipolar resistive switching behavior. We artificially formed conducting-nanofilaments in the BiFeO3 via conducting atomic force microscope techniques. The conducting-nanofilament wall, which does not possess any ferroelectric polarization, is then able to block domain propagation. Consequently, we demonstrate that the domain-wall motion is effectively confined within the conducting-nanofilament wall during polarization switching. This significant new insight potentially gives an opportunity for the artificial manipulation of nanoscale ferroelectric domain. SN - 1944-8252 UR - https://www.unboundmedicine.com/medline/citation/24749974/Confinement_of_ferroelectric_domain_wall_motion_at_artificially_formed_conducting_nanofilaments_in_epitaxial_BiFeO3_thin_films_ L2 - https://dx.doi.org/10.1021/am501630k DB - PRIME DP - Unbound Medicine ER -