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Low-voltage graphene field-effect transistors based on octadecylphosphonic acid modified solution-processed high-k dielectrics.
Nanotechnology. 2014 Jul 04; 25(26):265201.N

Abstract

In this study, a solution-processed bilayer high-k dielectric (Al2O(y)/TiO(x), abbrev. as ATO) was used to realize the low-voltage operation of graphene field-effect transistors (GFETs), in which the graphene was grown by atmospheric pressure chemical vapor deposition (APCVD). Upon modifying the interface between graphene and the dielectric by octadecylphosphonic acid (ODPA), outstanding room-temperature hole mobility up to 5805 cm(2) V(-1) s(-1) and electron mobility of 3232 cm(2) V(-1) s(-1) were obtained in a small gate voltage range from -3.0 V to 3.0 V under a vacuum. Meanwhile, an excellent on/off current ratio of about 8 was achieved. Our studies demonstrate an effective route in which utilizing the low-temperature solution-processed dielectrics can achieve low-voltage and high performance GFETs.

Authors

No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

24915783

Citation

Zhou, Shuang, et al. "Low-voltage Graphene Field-effect Transistors Based On Octadecylphosphonic Acid Modified Solution-processed High-k Dielectrics." Nanotechnology, vol. 25, no. 26, 2014, p. 265201.
Zhou S, Su Y, Xiao Y, et al. Low-voltage graphene field-effect transistors based on octadecylphosphonic acid modified solution-processed high-k dielectrics. Nanotechnology. 2014;25(26):265201.
Zhou, S., Su, Y., Xiao, Y., Zhao, N., Xu, J., & Wong, C. (2014). Low-voltage graphene field-effect transistors based on octadecylphosphonic acid modified solution-processed high-k dielectrics. Nanotechnology, 25(26), 265201. https://doi.org/10.1088/0957-4484/25/26/265201
Zhou S, et al. Low-voltage Graphene Field-effect Transistors Based On Octadecylphosphonic Acid Modified Solution-processed High-k Dielectrics. Nanotechnology. 2014 Jul 4;25(26):265201. PubMed PMID: 24915783.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Low-voltage graphene field-effect transistors based on octadecylphosphonic acid modified solution-processed high-k dielectrics. AU - Zhou,Shuang, AU - Su,Yaorong, AU - Xiao,Yubin, AU - Zhao,Ni, AU - Xu,Jianbin, AU - Wong,Chingping, Y1 - 2014/06/11/ PY - 2014/6/12/entrez PY - 2014/6/12/pubmed PY - 2014/6/12/medline SP - 265201 EP - 265201 JF - Nanotechnology JO - Nanotechnology VL - 25 IS - 26 N2 - In this study, a solution-processed bilayer high-k dielectric (Al2O(y)/TiO(x), abbrev. as ATO) was used to realize the low-voltage operation of graphene field-effect transistors (GFETs), in which the graphene was grown by atmospheric pressure chemical vapor deposition (APCVD). Upon modifying the interface between graphene and the dielectric by octadecylphosphonic acid (ODPA), outstanding room-temperature hole mobility up to 5805 cm(2) V(-1) s(-1) and electron mobility of 3232 cm(2) V(-1) s(-1) were obtained in a small gate voltage range from -3.0 V to 3.0 V under a vacuum. Meanwhile, an excellent on/off current ratio of about 8 was achieved. Our studies demonstrate an effective route in which utilizing the low-temperature solution-processed dielectrics can achieve low-voltage and high performance GFETs. SN - 1361-6528 UR - https://www.unboundmedicine.com/medline/citation/24915783/Low_voltage_graphene_field_effect_transistors_based_on_octadecylphosphonic_acid_modified_solution_processed_high_k_dielectrics_ L2 - https://doi.org/10.1088/0957-4484/25/26/265201 DB - PRIME DP - Unbound Medicine ER -
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