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Graphene/Si-nanowire heterostructure molecular sensors.
Sci Rep 2014; 4:5384SR

Abstract

Wafer-scale graphene/Si-nanowire (Si-NW) array heterostructures for molecular sensing have been fabricated by vertically contacting single-layer graphene with high-density Si NWs. Graphene is grown in large scale by chemical vapour deposition and Si NWs are vertically aligned by metal-assisted chemical etching of Si wafer. Graphene plays a key role in preventing tips of vertical Si NWs from being bundled, thereby making Si NWs stand on Si wafer separately from each other under graphene, a critical structural feature for the uniform Schottky-type junction between Si NWs and graphene. The molecular sensors respond very sensitively to gas molecules by showing 37 and 1280% resistance changes within 3.5/0.15 and 12/0.15 s response/recovery times under O2 and H2 exposures in air, respectively, highest performances ever reported. These results together with the sensor responses in vacuum are discussed based on the surface-transfer doping mechanism.

Authors+Show Affiliations

Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin 446-701, Korea.Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin 446-701, Korea.Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin 446-701, Korea.Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin 446-701, Korea.Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin 446-701, Korea.Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin 446-701, Korea.

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

24947403

Citation

Kim, Jungkil, et al. "Graphene/Si-nanowire Heterostructure Molecular Sensors." Scientific Reports, vol. 4, 2014, p. 5384.
Kim J, Oh SD, Kim JH, et al. Graphene/Si-nanowire heterostructure molecular sensors. Sci Rep. 2014;4:5384.
Kim, J., Oh, S. D., Kim, J. H., Shin, D. H., Kim, S., & Choi, S. H. (2014). Graphene/Si-nanowire heterostructure molecular sensors. Scientific Reports, 4, p. 5384. doi:10.1038/srep05384.
Kim J, et al. Graphene/Si-nanowire Heterostructure Molecular Sensors. Sci Rep. 2014 Jun 20;4:5384. PubMed PMID: 24947403.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Graphene/Si-nanowire heterostructure molecular sensors. AU - Kim,Jungkil, AU - Oh,Si Duk, AU - Kim,Ju Hwan, AU - Shin,Dong Hee, AU - Kim,Sung, AU - Choi,Suk-Ho, Y1 - 2014/06/20/ PY - 2014/03/31/received PY - 2014/06/03/accepted PY - 2014/6/21/entrez PY - 2014/6/21/pubmed PY - 2014/6/21/medline SP - 5384 EP - 5384 JF - Scientific reports JO - Sci Rep VL - 4 N2 - Wafer-scale graphene/Si-nanowire (Si-NW) array heterostructures for molecular sensing have been fabricated by vertically contacting single-layer graphene with high-density Si NWs. Graphene is grown in large scale by chemical vapour deposition and Si NWs are vertically aligned by metal-assisted chemical etching of Si wafer. Graphene plays a key role in preventing tips of vertical Si NWs from being bundled, thereby making Si NWs stand on Si wafer separately from each other under graphene, a critical structural feature for the uniform Schottky-type junction between Si NWs and graphene. The molecular sensors respond very sensitively to gas molecules by showing 37 and 1280% resistance changes within 3.5/0.15 and 12/0.15 s response/recovery times under O2 and H2 exposures in air, respectively, highest performances ever reported. These results together with the sensor responses in vacuum are discussed based on the surface-transfer doping mechanism. SN - 2045-2322 UR - https://www.unboundmedicine.com/medline/citation/24947403/Graphene/Si_nanowire_heterostructure_molecular_sensors_ L2 - http://dx.doi.org/10.1038/srep05384 DB - PRIME DP - Unbound Medicine ER -