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Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors.
ACS Appl Mater Interfaces. 2014 Nov 12; 6(21):18693-703.AA

Abstract

Although solution-processable high-k inorganic dielectrics have been implemented as a gate insulator for high-performance, low-cost transition metal oxide field-effect transistors (FETs), the high-temperature annealing (>300 °C) required to achieve acceptable insulating properties still limits the facile realization of flexible electronics. This study reports that the addition of a 2-dimetylamino-1-propanol (DMAPO) catalyst to a perhydropolysilazane (PHPS) solution enables a significant reduction of the curing temperature for the resulting SiO2 dielectrics to as low as 180 °C. The hydrolysis and condensation of the as-spun PHPS film under humidity conditions were enhanced greatly by the presence of DMAPO, even at extremely low curing temperatures, which allowed a smooth surface (roughness of 0.31 nm) and acceptable leakage characteristics (1.8 × 10(-6) A/cm(2) at an electric field of 1MV/cm) of the resulting SiO2 dielectric films. Although the resulting indium zinc oxide (IZO) FETs exhibited an apparent high mobility of 261.6 cm(2)/(V s), they suffered from a low on/off current (ION/OFF) ratio and large hysteresis due to the hygroscopic property of silazane-derived SiO2 film. The ION/OFF value and hysteresis instability of IZO FETs was improved by capping the high-k LaZrOx dielectric on a solution-processed SiO2 film via sol-gel processing at a low temperature of 180 °C while maintaining a high mobility of 24.8 cm(2)/(V s). This superior performance of the IZO FETs with a spin-coated LaZrOx/SiO2 bilayer gate insulator can be attributed to the efficient intercalation of the 5s orbital of In(3+) ion in the IZO channel, the good interface matching of IZO/LaZrOx and the carrier blocking ability of PHPS-derived SiO2 dielectric film. Therefore, the solution-processable LaZrOx/SiO2 stack can be a promising candidate as a gate dielectric for low-temperature, high-performance, and low-cost flexible metal oxide FETs.

Authors+Show Affiliations

Department of Materials Science and Engineering, Inha University , Incheon 402-751, Korea.No affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info availableNo affiliation info available

Pub Type(s)

Journal Article
Research Support, Non-U.S. Gov't

Language

eng

PubMed ID

25285585

Citation

Je, So Yeon, et al. "Solution-processable LaZrOx/SiO2 Gate Dielectric at Low Temperature of 180 °C for High-performance Metal Oxide Field-effect Transistors." ACS Applied Materials & Interfaces, vol. 6, no. 21, 2014, pp. 18693-703.
Je SY, Son BG, Kim HG, et al. Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors. ACS Appl Mater Interfaces. 2014;6(21):18693-703.
Je, S. Y., Son, B. G., Kim, H. G., Park, M. Y., Do, L. M., Choi, R., & Jeong, J. K. (2014). Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors. ACS Applied Materials & Interfaces, 6(21), 18693-703. https://doi.org/10.1021/am504231h
Je SY, et al. Solution-processable LaZrOx/SiO2 Gate Dielectric at Low Temperature of 180 °C for High-performance Metal Oxide Field-effect Transistors. ACS Appl Mater Interfaces. 2014 Nov 12;6(21):18693-703. PubMed PMID: 25285585.
* Article titles in AMA citation format should be in sentence-case
TY - JOUR T1 - Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors. AU - Je,So Yeon, AU - Son,Byeong-Geun, AU - Kim,Hyun-Gwan, AU - Park,Man-Young, AU - Do,Lee-Mi, AU - Choi,Rino, AU - Jeong,Jae Kyeong, Y1 - 2014/10/14/ PY - 2014/10/7/entrez PY - 2014/10/7/pubmed PY - 2014/10/7/medline KW - field-effect transistor KW - indium zinc oxide KW - lanthanum zirconium oxide KW - low temperature KW - silicon dioxide KW - solution process SP - 18693 EP - 703 JF - ACS applied materials & interfaces JO - ACS Appl Mater Interfaces VL - 6 IS - 21 N2 - Although solution-processable high-k inorganic dielectrics have been implemented as a gate insulator for high-performance, low-cost transition metal oxide field-effect transistors (FETs), the high-temperature annealing (>300 °C) required to achieve acceptable insulating properties still limits the facile realization of flexible electronics. This study reports that the addition of a 2-dimetylamino-1-propanol (DMAPO) catalyst to a perhydropolysilazane (PHPS) solution enables a significant reduction of the curing temperature for the resulting SiO2 dielectrics to as low as 180 °C. The hydrolysis and condensation of the as-spun PHPS film under humidity conditions were enhanced greatly by the presence of DMAPO, even at extremely low curing temperatures, which allowed a smooth surface (roughness of 0.31 nm) and acceptable leakage characteristics (1.8 × 10(-6) A/cm(2) at an electric field of 1MV/cm) of the resulting SiO2 dielectric films. Although the resulting indium zinc oxide (IZO) FETs exhibited an apparent high mobility of 261.6 cm(2)/(V s), they suffered from a low on/off current (ION/OFF) ratio and large hysteresis due to the hygroscopic property of silazane-derived SiO2 film. The ION/OFF value and hysteresis instability of IZO FETs was improved by capping the high-k LaZrOx dielectric on a solution-processed SiO2 film via sol-gel processing at a low temperature of 180 °C while maintaining a high mobility of 24.8 cm(2)/(V s). This superior performance of the IZO FETs with a spin-coated LaZrOx/SiO2 bilayer gate insulator can be attributed to the efficient intercalation of the 5s orbital of In(3+) ion in the IZO channel, the good interface matching of IZO/LaZrOx and the carrier blocking ability of PHPS-derived SiO2 dielectric film. Therefore, the solution-processable LaZrOx/SiO2 stack can be a promising candidate as a gate dielectric for low-temperature, high-performance, and low-cost flexible metal oxide FETs. SN - 1944-8252 UR - https://www.unboundmedicine.com/medline/citation/25285585/Solution_processable_LaZrOx/SiO2_gate_dielectric_at_low_temperature_of_180_°C_for_high_performance_metal_oxide_field_effect_transistors_ L2 - https://doi.org/10.1021/am504231h DB - PRIME DP - Unbound Medicine ER -
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